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FDR140T3G

SurfaceMountSchottkyPowerRectifier

FS

First Silicon Co., Ltd

LMBR140T3G

SurfaceMountSchottkyPowerRectifierPlasticSOD??23Package

LRCLeshan Radio Co., Ltd

乐山无线电乐山无线电股份有限公司

MBRA140T3

CHIPSCHOTTKYBARRIERDIODES

FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-OUtilizingFlameRetardantEpoxyMoldingCompound. •Forsurfacemountedapplications. •ExceedsenvironmentalstandardsofMIL-S-19500/228 •Lowleakagecurrent.

TAYCHIPSTShenzhen Taychipst Electronic Co., Ltd

泰迪斯电子深圳市泰迪斯电子科技有限公司

MBRA140T3

SurfaceMountSchottkyPowerRectifier

SurfaceMountSchottkyPowerRectifier SMAPowerSurfaceMountPackage ...employingtheSchottkyBarrierprincipleinalargeareametal–to–siliconpowerdiode.Stateoftheartgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowv

MotorolaMotorola, Inc

摩托罗拉

MBRA140T3

SurfaceMountSchottkyPowerRectifier

ThisdeviceemploystheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.Stateoftheartgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingandpolarit

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRA140T3

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRA140T3

ChipSchottkyBarrierDiodes-Siliconepitaxialplanertype

Siliconepitaxialplanertype Features •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-OUtilizingFlameRetardantEpoxyMoldingCompound. •Forsurfacemountedapplications. •ExceedsenvironmentalstandardsofMIL-S-19500/228 •Lowleakagecurrent.

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

MBRA140T3G

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRA140T3G

SURFACEMOUNTSURFACEMOUNT

EIC

EIC

MBRA140T3G

SurfaceMountSchottkyPowerRectifier

ThisdeviceemploystheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.Stateoftheartgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingandpolarit

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRA140T3G

SurfaceMountSchottkyPowerRectifierSMAPowerSurfaceMountPackage

ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal−to−siliconpowerdiode.Stateoftheartgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRM140T3

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRM140T3

SurfaceMountSchottkyPowerRectifier

SCHOTTKYBARRIERRECTIFIER1.0AMPERES,40VOLTS POWERMITE®PowerSurfaceMountPackage TheSchottkyPowermite®employstheSchottkyBarrierprinciplewithabarriermetalandepitaxialconstructionthatproducesoptimalforwardvoltagedrop−reversecurrenttradeoff.Theadvancedpackagin

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRM140T3G

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRM140T3G

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRS140T3

SurfaceMountSchottkyPowerRectifier

SCHOTTKYBARRIERRECTIFIER1.0AMPERE,40VOLTS SchottkyPowerRectifiersemploytheuseoftheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforl

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRS140T3

SurfaceMountSchottkyPowerRectifier

...employingtheSchottkyBarrierprincipleinalargeareametal–to–siliconpowerdiode.State–of–the–artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingandpolaritypr

MotorolaMotorola, Inc

摩托罗拉

MBRS140T3G

SurfaceMountSchottkyPowerRectifier

SCHOTTKYBARRIERRECTIFIER1.0AMPERE,40VOLTS SchottkyPowerRectifiersemploytheuseoftheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforl

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRS140T3G

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRS140T3G

SurfaceMountSchottkyPowerRectifier

SCHOTTKYBARRIERRECTIFIER1.0AMPERE,40VOLTS SchottkyPowerRectifiersemploytheuseoftheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforl

ONSEMION Semiconductor

安森美半导体安森美半导体公司

供应商型号品牌批号封装库存备注价格
ON
23+
SMB
120000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
询价
ON/安森美
23+
DO-214AA
50000
全新原装正品现货,支持订货
询价
ON/安森美
23+
DO-214AA
20000
原装正品 欢迎咨询
询价
ON-SEMICRO
2122+
DO214
50000
全新原装正品,优势渠道,假一赔十
询价
ON/安森美
23+
SMB
90000
只做原厂渠道价格优势可提供技术支持
询价
ON/安森美
22+
SMB
10000
绝对原装现货热卖
询价
ON/安森美
20+
DO-214
6000
只做原装现货特价出售
询价
ON/安森美
22+
SMB-2
20000
保证原装正品,假一陪十
询价
ON/安森美
2018+
1745
询价
ON/安森美
2018+
1745
询价
更多MBRS140T3G-ON供应商 更新时间2024-5-16 9:38:00