首页 >MBRS140T3G-ON>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
SurfaceMountSchottkyPowerRectifier | FS First Silicon Co., Ltd | FS | ||
SurfaceMountSchottkyPowerRectifierPlasticSOD??23Package | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | LRC | ||
CHIPSCHOTTKYBARRIERDIODES FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-OUtilizingFlameRetardantEpoxyMoldingCompound. •Forsurfacemountedapplications. •ExceedsenvironmentalstandardsofMIL-S-19500/228 •Lowleakagecurrent. | TAYCHIPSTShenzhen Taychipst Electronic Co., Ltd 泰迪斯电子深圳市泰迪斯电子科技有限公司 | TAYCHIPST | ||
SurfaceMountSchottkyPowerRectifier SurfaceMountSchottkyPowerRectifier SMAPowerSurfaceMountPackage ...employingtheSchottkyBarrierprincipleinalargeareametal–to–siliconpowerdiode.Stateoftheartgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowv | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
SurfaceMountSchottkyPowerRectifier ThisdeviceemploystheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.Stateoftheartgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingandpolarit | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SurfaceMountSchottkyPowerRectifier | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
ChipSchottkyBarrierDiodes-Siliconepitaxialplanertype Siliconepitaxialplanertype Features •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-OUtilizingFlameRetardantEpoxyMoldingCompound. •Forsurfacemountedapplications. •ExceedsenvironmentalstandardsofMIL-S-19500/228 •Lowleakagecurrent. | FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司 | FORMOSA | ||
SurfaceMountSchottkyPowerRectifier | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SURFACEMOUNTSURFACEMOUNT | EIC EIC | EIC | ||
SurfaceMountSchottkyPowerRectifier ThisdeviceemploystheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.Stateoftheartgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingandpolarit | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SurfaceMountSchottkyPowerRectifierSMAPowerSurfaceMountPackage ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal−to−siliconpowerdiode.Stateoftheartgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SurfaceMountSchottkyPowerRectifier | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SurfaceMountSchottkyPowerRectifier SCHOTTKYBARRIERRECTIFIER1.0AMPERES,40VOLTS POWERMITE®PowerSurfaceMountPackage TheSchottkyPowermite®employstheSchottkyBarrierprinciplewithabarriermetalandepitaxialconstructionthatproducesoptimalforwardvoltagedrop−reversecurrenttradeoff.Theadvancedpackagin | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SurfaceMountSchottkyPowerRectifier | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SurfaceMountSchottkyPowerRectifier | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SurfaceMountSchottkyPowerRectifier SCHOTTKYBARRIERRECTIFIER1.0AMPERE,40VOLTS SchottkyPowerRectifiersemploytheuseoftheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforl | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SurfaceMountSchottkyPowerRectifier ...employingtheSchottkyBarrierprincipleinalargeareametal–to–siliconpowerdiode.State–of–the–artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingandpolaritypr | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
SurfaceMountSchottkyPowerRectifier SCHOTTKYBARRIERRECTIFIER1.0AMPERE,40VOLTS SchottkyPowerRectifiersemploytheuseoftheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforl | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SurfaceMountSchottkyPowerRectifier | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SurfaceMountSchottkyPowerRectifier SCHOTTKYBARRIERRECTIFIER1.0AMPERE,40VOLTS SchottkyPowerRectifiersemploytheuseoftheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforl | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON |
23+ |
SMB |
120000 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
询价 | ||
ON/安森美 |
23+ |
DO-214AA |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ON/安森美 |
23+ |
DO-214AA |
20000 |
原装正品 欢迎咨询 |
询价 | ||
ON-SEMICRO |
2122+ |
DO214 |
50000 |
全新原装正品,优势渠道,假一赔十 |
询价 | ||
ON/安森美 |
23+ |
SMB |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
ON/安森美 |
22+ |
SMB |
10000 |
绝对原装现货热卖 |
询价 | ||
ON/安森美 |
20+ |
DO-214 |
6000 |
只做原装现货特价出售 |
询价 | ||
ON/安森美 |
22+ |
SMB-2 |
20000 |
保证原装正品,假一陪十 |
询价 | ||
ON/安森美 |
2018+ |
1745 |
询价 | ||||
ON/安森美 |
2018+ |
1745 |
询价 |
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