Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarit

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ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

文件：301.4 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

SURFACE MOUNT SURFACE MOUNT

文件：99.84 Kbytes 页数：2 Pages

EIC

Surface Mount Schottky Power Rectifier

文件：106.31 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Schottky Barrier Rectifiers

EIC

灿阳

Package：DO-214AC，SMA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 40V 1A SMA

ONSEMI

安森美半导体