SWITCHMODE Schottky Power Rectifier

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency s

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ONSEMI

安森美半导体

Switch-mode Schottky Power Rectifier

The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency

文件：59.44 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Schottky Barrier Rectifier

Features ● Plastic package has underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction， positive center tap ● Metal of silicon rectifier， majority carrier conduction ● Low forward voltage， high efficiency ● Guarding for over voltage protection ● For use in low

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SURGE

Schottky Barrier Rectifier

Features ● Plastic package has underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction， positive center tap ● Metal of silicon rectifier， majority carrier conduction ● Low forward voltage， high efficiency ● Guarding for over voltage protection ● For use in low

文件：500.05 Kbytes 页数：5 Pages

SURGE

丝印：MBRF2060CT；Package：ITO-220AB；SMD Schottky Barrier Rectifiers

Features - For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. - Metal silicon junction, majority carrier conduction. - High current capability. - Low power loss, high efficiency. - Plastic package has underwrites laboratory flammability cla

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COMCHIP

典琦

SCHOTTKY RECTIFIER

Features: • 125 ℃TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Th

文件：70.15 Kbytes 页数：5 Pages

SMC

桑德斯微电子

MBRF2060CTL SCHOTTKY RECTIFIER

Features 125C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Fre

文件：442.06 Kbytes 页数：4 Pages

SMCDIODE

桑德斯微电子

MBRF2060CTP SCHOTTKY RECTIFIER

Features 150C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Fre

文件：192.7 Kbytes 页数：4 Pages

SMCDIODE

桑德斯微电子

SCHOTTKY RECTIFIER

Features: • 150 ℃TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Th

文件：121.41 Kbytes 页数：7 Pages

SMC

桑德斯微电子

20 Amperes Insulated Dual Common Anode Schottky Half Bridge Rectifiers

Features ◆ Standard MBR matured technology with high reliablity ◆ Low forward voltage drop ◆ High current capability ◆ High surge current capability ◆ Low reverse leakage current Application ◆ Automotive Inverters and Solar Inverters ◆ Plating Power Supply,SMPS,EPS and UPS ◆ Car Audio Amp

文件：623.9 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体