MBRF2060CTG分立半导体产品的二极管-整流器-阵列规格书PDF中文资料

MBRF2060CTG属于分立半导体产品的二极管-整流器-阵列。由安森美半导体公司制造生产的MBRF2060CTG二极管 - 整流器 - 阵列二极管和整流器阵列系列中的产品可在单个封装内包含两个或多个分立二极管。其特征表述类似于单个分立二极管，并增加了“二极管配置”属性，该属性指示设备中二极管之间任何内部连接的存在情况和特性。请注意，具有全桥配置的阵列被专门排除在外，并列为单独的产品系列。

The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency switching power supplies, free wheeling diodes and polarity protection diodes.

特性 Features

• Highly Stable Oxide Passivated Junction

• Very Low Forward Voltage Drop

• Matched Dual Die Construction

• High Junction Temperature Capability

• High dv/dt Capability

• Excellent Ability to Withstand Reverse Avalanche Energy Transients

• Guardring for Stress Protection

• Epoxy Meets UL 94 V−0 @ 0.125 in

• Electrically Isolated. No Isolation Hardware Required.

• These Devices are Pb−Free and are RoHS Compliant