首页 >MBRF2060CTG>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

MBRF2060CTG

SWITCHMODE Schottky Power Rectifier

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency s

文件:134.16 Kbytes 页数:4 Pages

ONSEMI

安森美半导体

MBRF2060CTG

Switch-mode Schottky Power Rectifier

The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency

文件:59.44 Kbytes 页数:4 Pages

ONSEMI

安森美半导体

MBRF2060CTG

Product Specification

Features ● Plastic package has underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction, positive center tap ● Metal of silicon rectifier, majority carrier conduction ● Low forward voltage, high efficiency ● Guarding for over voltage protection ● For use in low

文件:281.73 Kbytes 页数:6 Pages

GOOD-ARK

固锝电子

MBRF2060CTG

Schottky Barrier Rectifier

Features ● Plastic package has underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction, positive center tap ● Metal of silicon rectifier, majority carrier conduction ● Low forward voltage, high efficiency ● Guarding for over voltage protection ● For use in low

文件:500.05 Kbytes 页数:5 Pages

SURGE

MBRF2060CTG

SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 60 VOLTS

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency s

文件:484.27 Kbytes 页数:4 Pages

KERSEMI

MBRF2060CTG(TO220F)

Schottky Barrier Rectifier

Features ● Plastic package has underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction, positive center tap ● Metal of silicon rectifier, majority carrier conduction ● Low forward voltage, high efficiency ● Guarding for over voltage protection ● For use in low

文件:500.05 Kbytes 页数:5 Pages

SURGE

MBRF2060CTG

Package:TO-220-3 整包;包装:卷带(TR) 类别:分立半导体产品 二极管 - 整流器 - 阵列 描述:DIODE ARRAY SCHOTTKY 60V TO220FP

ONSEMI

安森美半导体

产品属性

  • 产品编号:

    MBRF2060CTG

  • 制造商:

    onsemi

  • 类别:

    分立半导体产品 > 二极管 - 整流器 - 阵列

  • 包装:

    卷带(TR)

  • 二极管配置:

    1 对共阴极

  • 二极管类型:

    肖特基

  • 电流 - 平均整流 (Io)(每二极管):

    10A

  • 速度:

    快速恢复 =< 500ns,> 200mA(Io)

  • 工作温度 - 结:

    -65°C ~ 175°C

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3 整包

  • 供应商器件封装:

    TO-220FP

  • 描述:

    DIODE ARRAY SCHOTTKY 60V TO220FP

供应商型号品牌批号封装库存备注价格
ON
23+
TO-220F
65400
询价
ON(安森美)
2511
5689
电子元器件采购降本 30%!公司原厂直采,砍掉中间差价
询价
ON
24+
TO-2203LEADFULLPA
8866
询价
ON
24+/25+
1390
原装正品现货库存价优
询价
ON
2015+
TO-2203
12500
全新原装,现货库存长期供应
询价
ON
1728+
?
7500
只做原装进口,假一罚十
询价
ON
25+
TO-220F
9800
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
ON
23+
TO-220-3
11846
一级代理商现货批发,原装正品,假一罚十
询价
ON
25+23+
TO220AB
17248
绝对原装正品全新进口深圳现货
询价
三年内
1983
只做原装正品
询价
更多MBRF2060CTG供应商 更新时间2026-7-22 15:21:00