MBRM110LT1G数据手册供应代理安森美半导体-114ic电子网

首页 >MBRM110LT1G>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
MBRM110LT1G	文件：157.15 Kbytes Page：5 Pages	Surface Mount Schottky Power Rectifier Surface Mount Schottky Power Rectifier POWERMITE® Power Surface Mount Package The Schottky Powermite® employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop−reverse current tradeoff. The advanced packaging techniques prov 文件：157.15 Kbytes 页数：5 Pages	ONSEMI 安森美半导体	ONSEMI
MBRM110LT1G	文件：65.95 Kbytes Page：5 Pages	Surface Mount Schottky Power Rectifier 文件：65.95 Kbytes 页数：5 Pages	ONSEMI 安森美半导体	ONSEMI
MBRM110LT1G	文件：100 bytes Page：1 Pages	Package：DO-216AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带类别：分立半导体产品二极管 - 整流器 - 单描述：DIODE SCHOTTKY 10V 1A POWERMITE	ONSEMI 安森美半导体	ONSEMI
NRVBM110LT1G	文件：157.15 Kbytes Page：5 Pages	Surface Mount Schottky Power Rectifier Surface Mount Schottky Power Rectifier POWERMITE® Power Surface Mount Package The Schottky Powermite® employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop−reverse current tradeoff. The advanced packaging techniques prov 文件：157.15 Kbytes 页数：5 Pages	ONSEMI 安森美半导体	ONSEMI

更多MBRM110LT1G供应商更新时间2025-10-6 9:38:00