SWITCHMODE??Schottky Power Rectifier

SWITCHMODE™ Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rect

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ONSEMI

安森美半导体

Dual Common-Cathode Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

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VISHAYVishay Siliconix

威世威世科技公司

Dual Schottky Barrier Rectifiers

Reverse Voltage 35 to 60 Volts Forward Current 25.0 Amperes Features ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high effi

文件：259 Kbytes 页数：3 Pages

GOOD-ARK

固锝电子

SWITCHMODE??Schottky Power Rectifirer

SWITCHMODE™ Schottky Power Rectifirer The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as recti

文件：80.89 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

Isolation 25.0 AMPS. Schottky Barrier Rectifiers

Isolated 25.0 AMPS. Schottky Barrier Rectifiers Features
Plastic material used carries Underwriters Laboratory Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High

文件：120.95 Kbytes 页数：2 Pages

TSC

台湾半导体

SCHOTTKY ISOLATED PLASTIC RECTIFIER

Reverse Voltage - 35 to 60 Volts Forward Current - 30.0 Amperes FEATURES ♦ Isolated plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Dual rectifier construction, positive center-tap ♦ Metal silicon junction, majority carrier conduction ♦ Low p

文件：117.45 Kbytes 页数：2 Pages

GE

TO-220F Plastic-Encapsulate Diodes

SCHOTTKY BARRIER RECTIFIER FEATURES • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Invert

文件：1.62431 Mbytes 页数：1 Pages

TGS

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE: 30 - 100 V CURRENT: 30 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage d

文件：375.52 Kbytes 页数：2 Pages

DSK

Isolated plastic package has Underwriters Laboratory Flammability Classifications 94V-0

FEATURES ♦ Isolated plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Dual rectifier construction, positive center-tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward

文件：128.68 Kbytes 页数：2 Pages

KERSEMI

Isolated plastic package has Underwriters Laboratory Flammability Classifications 94V-0

FEATURES ♦ Isolated plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Dual rectifier construction, positive center-tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward

文件：114.6 Kbytes 页数：2 Pages

KERSEMI