丝印：MBRF20200CT；Package：ITO-220AB；SMD Schottky Barrier Rectifiers

Features - For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. - Metal silicon junction, majority carrier conduction. - High current capability. - Low power loss, high efficiency. - Plastic package has underwrites laboratory flammability cla

文件：443.34 Kbytes 页数：3 Pages

COMCHIP

典琦

20A SCHOTTKY BARRIER RECTIFIER

Description and Applications This Schottky Barrier Rectifier is designed to meet the general requirements of commercial applications. It is ideally suited for use as: ● Polarity Protection Diode ● Re-Circulating Diode ● Switching Diode Features and Benefits ● Guard Ring Die Construction for

文件：472.45 Kbytes 页数：4 Pages

DIODES

美台半导体

20 AMPERES SCHOTTKY BARRIER RECTIFIERS

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capability • For use in low voltage, high frequen

文件：598.94 Kbytes 页数：3 Pages

DYELEC

迪一电子

SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency s

文件：455.63 Kbytes 页数：4 Pages

KERSEMI

SWITCHMODE Schottky Power Rectifier

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low–voltage, high–frequency s

文件：101.43 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Switch-mode Schottky Power Rectifier

The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−freque

文件：173.79 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Switch-mode Schottky Power Rectifier

The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−freque

文件：173.79 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

20A SCHOTTKY BARRIER RECTIFIER

Description and Applications This Schottky Barrier Rectifier is designed to meet the general requirements of commercial applications. It is ideally suited for use as: ● Polarity Protection Diode ● Re-Circulating Diode ● Switching Diode Features and Benefits ● Guard Ring Die Construction for

文件：472.45 Kbytes 页数：4 Pages

DIODES

美台半导体

20A SCHOTTKY BARRIER RECTIFIER

Description and Applications This Schottky Barrier Rectifier is designed to meet the general requirements of commercial applications. It is ideally suited for use as: ● Polarity Protection Diode ● Re-Circulating Diode ● Switching Diode Features and Benefits ● Guard Ring Die Construction for

文件：540.25 Kbytes 页数：5 Pages

DIODES

美台半导体

20 Amperes Insulated Dual Common Anode Schottky Half Bridge Rectifiers

Features ◆ Standard MBR matured technology with high reliablity ◆ Low forward voltage drop ◆ High current capability ◆ High surge current capability ◆ Low reverse leakage current Application ◆ Automotive Inverters and Solar Inverters ◆ Plating Power Supply,SMPS,EPS and UPS ◆ Car Audio Amp

文件：623.9 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体