丝印：MBRF20200CT；Package：ITO-220AB；20A High Power Schottky Barrier Rectifiersnull

■ Features • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-free part,

文件：99.88 Kbytes 页数：3 Pages

CITC

竹懋科技

Dual Common-Cathode Ultra Low VF Schottky Rectifier

Features • Guard ring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Solder Dip 260 °C, 40 s • Component in accordance to ROHS 2002/95/EC and WEEE 2002/96/EC

文件：346.49 Kbytes 页数：4 Pages

BWTECH

MBRF20200CT (CTR) SCHOTTKY RECTIFIER

Features 175C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Fre

文件：851.48 Kbytes 页数：4 Pages

SMCDIODE

桑德斯微电子

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

文件：1.48791 Mbytes 页数：2 Pages

SAMYANG

三阳电子

SWITCHMODE Schottky Power Rectifier

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low–voltage, high–frequency s

文件：101.43 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION

SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES • Average Output Rectified Current : IO=20A. • Repetitive Peak Reverse Voltage : VRRM=200V. • Fast Reverse Recovery Time : trr=35ns.

文件：439.87 Kbytes 页数：2 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

For General Purpose

Features ● Plastic package has underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction, positive center tap ● Metal of silicon rectifier, majority carrier conduction ● Low forward voltage, high efficiency ● Guarding for over voltage protection ● For use in

文件：354.01 Kbytes 页数：6 Pages

GOOD-ARK

固锝电子

Low forward voltage drop

Description Littelfuse MBR series Schottky Barrier Rectifer is designed to meet the general requirements of commercial applications by providing high temperature, low leakage and low VF products. It is suitable for high frequency switching mode power supply, free-wheeling diodes and polarity pro

文件：621.82 Kbytes 页数：3 Pages

LITTELFUSE

力特

SWITCHMODE??Schottky Power Rectifirer

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low–voltage, high–frequency s

文件：82.34 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

SCHOTTKY BARRIER RECTIFIERS

Feaures High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) Low stored charge majority carrier conduction

文件：1.43671 Mbytes 页数：2 Pages

SUNMATE

森美特