Dual Common-Cathode Ultra Low VF Schottky Rectifier

Features • Guard ring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Solder Dip 260 °C, 40 s • Component in accordance to ROHS 2002/95/EC and WEEE 2002/96/EC

文件：346.49 Kbytes 页数：4 Pages

BWTECH

MBRF20200CT (CTR) SCHOTTKY RECTIFIER

Features 175C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Fre

文件：851.48 Kbytes 页数：4 Pages

SMCDIODE

桑德斯微电子

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

文件：1.48791 Mbytes 页数：2 Pages

SAMYANG

三阳电子

丝印：MBRF20200CT；Package：ITO-220AB；20A High Power Schottky Barrier Rectifiersnull

■ Features • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-free part,

文件：99.88 Kbytes 页数：3 Pages

CITC

竹懋科技

SCHOTTKY BARRIER TYPE DIODE

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency s

文件：766.47 Kbytes 页数：2 Pages

KERSEMI

20A SCHOTTKY BARRIER RECTIFIER

Description and Applications This Schottky Barrier Rectifier is designed to meet the general requirements of commercial applications. It is ideally suited for use as: ● Polarity Protection Diode ● Re-Circulating Diode ● Switching Diode Features and Benefits ● Guard Ring Die Construction for

文件：472.45 Kbytes 页数：4 Pages

DIODES

美台半导体

20 AMPERES SCHOTTKY BARRIER RECTIFIERS

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capability • For use in low voltage, high frequen

文件：598.94 Kbytes 页数：3 Pages

DYELEC

迪一电子

SWITCHMODE Schottky Power Rectifier

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low–voltage, high–frequency s

文件：101.43 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Switch-mode Schottky Power Rectifier

The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−freque

文件：173.79 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency s

文件：455.63 Kbytes 页数：4 Pages

KERSEMI