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MBRB2535CTL

SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package

SWITCHMODE™ Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for us

文件:61.6 Kbytes 页数:5 Pages

ONSEMI

安森美半导体

MBRB2535CTL

MBRB2535CTL SCHOTTKY RECTIFIER

Features 125℃ TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free

文件:289.02 Kbytes 页数:4 Pages

SMCDIODE

桑德斯微电子

MBRB2535CTL

SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package

文件:105.66 Kbytes 页数:6 Pages

Motorola

摩托罗拉

MBRB2535CTL

丝印:D2PAK;Package:TO-263;Schottky Barrier Rectifier

文件:250.27 Kbytes 页数:2 Pages

ISC

无锡固电

MBRB2535CTL

SCHOTTKY RECTIFIER

文件:254.27 Kbytes 页数:7 Pages

SMC

桑德斯微电子

MBRB2535CTLG

SWITCHMODE Power Rectifier

SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use

文件:142.69 Kbytes 页数:5 Pages

ONSEMI

安森美半导体

MBRB2535CTLG

SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package

SWITCHMODE™ Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for us

文件:61.6 Kbytes 页数:5 Pages

ONSEMI

安森美半导体

MBRB2535CTLT4

SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package

SWITCHMODE™ Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for us

文件:61.6 Kbytes 页数:5 Pages

ONSEMI

安森美半导体

MBRB2535CTLT4G

SWITCHMODE Power Rectifier

SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use

文件:142.69 Kbytes 页数:5 Pages

ONSEMI

安森美半导体

MBRB2535CTLT4G

SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package

SWITCHMODE™ Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for us

文件:61.6 Kbytes 页数:5 Pages

ONSEMI

安森美半导体

产品属性

  • 产品编号:

    MBRB2535CTL

  • 制造商:

    onsemi

  • 类别:

    分立半导体产品 > 二极管 - 整流器 - 阵列

  • 系列:

    SWITCHMODE™

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 二极管配置:

    1 对共阴极

  • 二极管类型:

    肖特基

  • 电流 - 平均整流 (Io)(每二极管):

    12.5A

  • 速度:

    快速恢复 =< 500ns,> 200mA(Io)

  • 工作温度 - 结:

    -65°C ~ 125°C

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    TO-263-3,D²Pak(2 引线 + 接片),TO-263AB

  • 供应商器件封装:

    D²PAK

  • 描述:

    DIODE ARRAY SCHOTTKY 35V D2PAK

供应商型号品牌批号封装库存备注价格
ONSEMICONDUC
05+
原厂原装
4304
只做全新原装真实现货供应
询价
ON
25+
TO-220
18000
原厂直接发货进口原装
询价
ON
2015+
D2PAK3
12500
全新原装,现货库存长期供应
询价
ON
25+
TO-263
20
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
ON
24+
D2PAK3LEAD
8866
询价
ON
23+
TO-252
5000
原装正品,假一罚十
询价
HITACHI
23+
SMD
12000
全新原装假一赔十
询价
ON
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
询价
TO-251
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
ON/安森美
23+
TO-263
30000
全新原装现货,价格优势
询价
更多MBRB2535CTL供应商 更新时间2025-10-10 15:32:00