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MBRB2515

SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package

The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free

文件:101.36 Kbytes 页数:6 Pages

Motorola

摩托罗拉

MBRB2515

SWITCHMODE™ Power Rectifier D2PAK Surface Mount Power Package

恩XP

恩XP

MBRB2515L

SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package

The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free

文件:101.36 Kbytes 页数:6 Pages

Motorola

摩托罗拉

MBRB2515L

Schottky Barrier Rectifier

FEATURES ·Guardring for Stress Protection ·Low Forward Voltage

文件:266.89 Kbytes 页数:2 Pages

ISC

无锡固电

MBRB2515L

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers FEATURES * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protect

文件:108.42 Kbytes 页数:2 Pages

SIRECTIFIER

矽莱克电子

MBRB2515L

SWITCHMODE Power Rectifier ORing Function Diode D2PAK Surface Mount Power Package

The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free

文件:60.41 Kbytes 页数:4 Pages

ONSEMI

安森美半导体

MBRB2515LG

SWITCHMODE Power Rectifier ORing Function Diode D2PAK Surface Mount Power Package

The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free

文件:60.41 Kbytes 页数:4 Pages

ONSEMI

安森美半导体

MBRB2515LT4

SWITCHMODE Power Rectifier ORing Function Diode D2PAK Surface Mount Power Package

The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free

文件:60.41 Kbytes 页数:4 Pages

ONSEMI

安森美半导体

MBRB2515LT4G

SWITCHMODE Power Rectifier ORing Function Diode D2PAK Surface Mount Power Package

The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free

文件:60.41 Kbytes 页数:4 Pages

ONSEMI

安森美半导体

MBRB2515L

High Tjm Low IRRM Schottky Barrier Diodes

文件:128.8 Kbytes 页数:2 Pages

SIRECTIFIER

矽莱克电子

技术参数

  • Pb-free:

    Pb

  • Halide free:

    H

  • Status:

    Active

  • Configuration:

    Single

  • VRRM Min (V):

    15

  • VF Max (V):

    0.45

  • IRM Max (µA):

    15000

  • IO(rec) Max (A):

    25

  • IFSM Max (A):

    150

  • Package Type:

    D2PAK-3/TO-263-2

供应商型号品牌批号封装库存备注价格
ON/安森美
23+
TO-263
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
ON
2015+
D2PAK3
12500
全新原装,现货库存长期供应
询价
ON
24+/25+
800
原装正品现货库存价优
询价
MOT
24+
TO263
3000
公司现货
询价
ON
25+
TO-252
12
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
ONSEMI
24+
原厂封装
3050
原装现货假一罚十
询价
ON
05+
原厂原装
651
只做全新原装真实现货供应
询价
ON
1650+
?
7500
只做原装进口,假一罚十
询价
ON
25+
TO263
2987
绝对全新原装现货供应!
询价
ON
478
全新原装 货期两周
询价
更多MBRB2515供应商 更新时间2025-12-2 16:04:00