SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package

The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free

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Motorola

摩托罗拉

Schottky Barrier Rectifier

FEATURES ·Guardring for Stress Protection ·Low Forward Voltage

文件：266.89 Kbytes 页数：2 Pages

ISC

无锡固电

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers FEATURES * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protect

文件：108.42 Kbytes 页数：2 Pages

SIRECTIFIER

矽莱克电子

SWITCHMODE Power Rectifier ORing Function Diode D2PAK Surface Mount Power Package

The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free

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ONSEMI

安森美半导体

High Tjm Low IRRM Schottky Barrier Diodes

文件：128.8 Kbytes 页数：2 Pages

SIRECTIFIER

矽莱克电子

SWITCHMODE Power Rectifier ORing Function Diode D2PAK Surface Mount Power Package

The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free

文件：60.41 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

SWITCHMODE Power Rectifier ORing Function Diode D2PAK Surface Mount Power Package

The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free

文件：60.41 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

SWITCHMODE Power Rectifier ORing Function Diode D2PAK Surface Mount Power Package

The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free

文件：60.41 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

High Tjm Low IRRM Schottky Barrier Diodes

文件：128.8 Kbytes 页数：2 Pages

SIRECTIFIER

矽莱克电子

肖特基势垒整流器，15 V，25 A

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, • Guardring for Stress Protection\n• Low Forward Voltage\n• 100 C Operating Junction Temperature\n• Epoxy Meets UL94, VO at 1/8\"\n• Short Heat Sink Tab ManufacturedNot Sheared!\n• Similar in Size to the Industry Standard TO-220 PackageMechanical Characteristics:\n• Case: Epoxy, Molded\n• Weight: 1.;

ONSEMI

安森美半导体