首页 >MBRB1045>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

MBRB1045-E3SLASH45

Schottky Barrier Rectifier

FEATURES • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AC and ITO-220AC package) • Component in

文件:143.97 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世威世科技公司

MBRB1045-E3SLASH81

Schottky Barrier Rectifier

FEATURES • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AC and ITO-220AC package) • Component in

文件:143.97 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世威世科技公司

MBRB1045G

Schottky Power Rectifier, Switch-Mode, 10 A, 45 V

This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supp

文件:268.7 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

MBRB1045G

Switch-mode Schottky Power Rectifier

SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suite

文件:79.77 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

MBRB1045G

SWITCHMODE Schottky Power Rectifier

Switch-mode Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally sui

文件:165.47 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

MBRB1045G

SWITCHMODE Schottky Power Rectifier Surface Mount Power Package

SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suite

文件:83.67 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

MBRB1045G_V01

Schottky Power Rectifier, Switch-Mode, 10 A, 45 V

This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supp

文件:268.7 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

MBRB1045HE3/45

Schottky Barrier Rectifier

FEATURES • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AC and ITO-220AC package) • Component in

文件:143.97 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世威世科技公司

MBRB1045HE3/81

Schottky Barrier Rectifier

FEATURES • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AC and ITO-220AC package) • Component in

文件:143.97 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世威世科技公司

MBRB1045HE3SLASH45

Schottky Barrier Rectifier

FEATURES • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AC and ITO-220AC package) • Component in

文件:143.97 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世威世科技公司

产品属性

  • 产品编号:

    MBRB1045

  • 制造商:

    onsemi

  • 类别:

    分立半导体产品 > 二极管 - 整流器 - 单

  • 系列:

    SWITCHMODE™

  • 包装:

    散装

  • 二极管类型:

    肖特基

  • 电流 - 平均整流 (Io):

    10A

  • 速度:

    快速恢复 =< 500ns,> 200mA(Io)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    TO-263-3,D²Pak(2 引线 + 接片),TO-263AB

  • 供应商器件封装:

    D²PAK

  • 工作温度 - 结:

    -65°C ~ 175°C

  • 描述:

    DIODE SCHOTTKY 45V 10A D2PAK

供应商型号品牌批号封装库存备注价格
IR
05+
原厂原装
14801
只做全新原装真实现货供应
询价
IR
24+
3000
公司现货
询价
ON
2015+
D2PAK3
12500
全新原装,现货库存长期供应
询价
ON
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
询价
IR
23+
BGAQFP
8659
原装公司现货!原装正品价格优势.
询价
VISHAY
25+23+
TO-263
39605
绝对原装正品现货,全新深圳原装进口现货
询价
ON
24+
TO-263
90000
一级代理商进口原装现货、假一罚十价格合理
询价
24+
TO-263
6430
原装现货/欢迎来电咨询
询价
ON(安森美)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
VISHAY/威世
23+
TO-263
50000
全新原装正品现货,支持订货
询价
更多MBRB1045供应商 更新时间2025-11-24 16:14:00