| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarit 文件：72.11 Kbytes 页数：4 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Surface Mount Schottky Power Rectifier Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low v 文件：135.61 Kbytes 页数：4 Pages | Motorola 摩托罗拉 | Motorola | ||
Chip Schottky Barrier Diodes - Silicon epitaxial planer type Silicon epitaxial planer type Features • Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. • For surface mounted applications. • Exceeds environmental standards of MIL-S-19500 / 228 • Low leakage current. 文件：71.44 Kbytes 页数：2 Pages | FORMOSA 美丽微半导体 | FORMOSA | ||
CHIP SCHOTTKY BARRIER DIODES FEATURES • Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. • For surface mounted applications. • Exceeds environmental standards of MIL-S-19500 / 228 • Low leakage current. 文件：6.37993 Mbytes 页数：2 Pages | TAYCHIPST 泰迪斯电子 | TAYCHIPST | ||
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarit 文件：107.18 Kbytes 页数：5 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol 文件：301.4 Kbytes 页数：6 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Schottky Rectifier, 1.0 A 文件：110.75 Kbytes 页数：7 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
Surface Mount Schottky Power Rectifier 文件：106.31 Kbytes 页数：5 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Surface Mount Schottky Power Rectifier 文件：106.31 Kbytes 页数：5 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Surface Mount Schottky Power Rectifier 文件：106.31 Kbytes 页数：5 Pages | ONSEMI 安森美半导体 | ONSEMI |
技术参数
- Pb-free：
Pb
- AEC Qualified：
A
- Halide free：
H
- PPAP Capablee：
P
- Status：
Active
- Configuration：
Single
- VRRM Min (V)：
40
- VF Max (V)：
0.55
- IRM Max (µA)：
500
- IO(rec) Max (A)：
1
- IFSM Max (A)：
30
- Package Type：
SMA-2
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
2025+ |
SMA-2 |
5000 |
原装进口价格优 请找坤融电子! |
询价 | ||
ON |
24+ |
5000 |
量大要订货 |
询价 | |||
SUNMATE(森美特) |
2019+ROHS |
SMA(DO-214AC) |
66688 |
森美特高品质产品原装正品免费送样 |
询价 | ||
FAIRCHILD |
24+ |
SMA |
25000 |
一级专营品牌全新原装热卖 |
询价 | ||
SMD |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
询价 | ||
ON |
20+ |
SMA-2 |
36800 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
ON/安森美 |
24+ |
SMA |
2110 |
大批量供应优势库存热卖 |
询价 | ||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
ON/安森美 |
23+ |
SMA |
8215 |
原厂原装 |
询价 | ||
PLINGSEMIC |
23+ |
SOD-123 |
50000 |
全新原装正品现货,支持订货 |
询价 |
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