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MBR830

Schottky Barrier Recitifiers

文件:443.78 Kbytes 页数:3 Pages

HY

虹扬科技

MBR830CT

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

文件:1.44204 Mbytes 页数:2 Pages

SAMYANG

三阳电子

MBR830CT

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

文件:1.42665 Mbytes 页数:2 Pages

SAMYANG

三阳电子

MBR830CT

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

文件:1.45009 Mbytes 页数:2 Pages

SAMYANG

三阳电子

MBR830CT

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

文件:1.4383 Mbytes 页数:2 Pages

SAMYANG

三阳电子

MBR830CT

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current -8.0 Amperes FEATURES ● The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ● Construction utilizes void-free ● molded plastic technique ● Low reverse leakage ● High forward surge

文件:586.94 Kbytes 页数:2 Pages

CHENDA

辰达半导体

MBR830_16

High Tjm Low IRRM Schottky Barrier Diodes

文件:112.18 Kbytes 页数:2 Pages

SIRECTIFIER

矽莱克电子

MBR830_17

SCHOTTKY BARRIER RECTIFIERS

文件:141.68 Kbytes 页数:3 Pages

HY

虹扬科技

MBR830_V01

Schottky Barrier Recitifiers

文件:443.78 Kbytes 页数:3 Pages

HY

虹扬科技

MBR830CT

丝印:MDDMBR830CT;Package:TO-220AB;SCHOTTKY BARRIER RECTIFIER

文件:654.54 Kbytes 页数:2 Pages

CHENDA

辰达半导体

技术参数

  • Pb-free:

    Pb

  • AEC Qualified:

    A

  • Halide free:

    H

  • PPAP Capablee:

    P

  • Status:

    Active

  • Configuration:

    Single

  • VRRM Min (V):

    30

  • VF Max (V):

    0.7

  • IRM Max (µA):

    200

  • IO(rec) Max (A):

    8

  • IFSM Max (A):

    150

  • Package Type:

    SO-8FL/DFN-5

供应商型号品牌批号封装库存备注价格
Diodes
17+
TO-220
6200
询价
DIODES
23+
TO-220
10000
专做原装正品,假一罚百!
询价
DIODES/美台
2447
TO-220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
DIODES/美台
22+
TO-220
6000
十年配单,只做原装
询价
DIODES/美台
22+
TO-220
25000
只做原装进口现货,专注配单
询价
DIODES/美台
23+
TO-220
89630
当天发货全新原装现货
询价
DIODES
25+
TO-TO-220
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
Diodes
2410+
TO-220
3866
优势代理渠道 原装现货 可全系列订货
询价
三年内
1983
只做原装正品
询价
ON
25+
DFN-5
3675
就找我吧!--邀您体验愉快问购元件!
询价
更多MBR830供应商 更新时间2026-1-30 16:00:00