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MBR230LSF

SCHOTTKY DIODE REVERSE VOLTAGE 30V FORWARD CURRENT 2.0A

DESCRIPTION The MBR230LSF is available in SOD-123FL Package FEATURES  Metal silicon junction, majority carrier conduction  For surface mounted applications  Low power loss, high efficiency  High forward surge current capability  For use in low voltage, high frequency inverters, free

文件:469.64 Kbytes 页数:4 Pages

AITSEMI

创瑞科技

MBR230LSFT1G

Surface Mount Schottky Power Rectifier Plastic SOD-123 Package

This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system

文件:197.63 Kbytes 页数:6 Pages

ONSEMI

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MBR230LSFT1G_V01

Surface Mount Schottky Power Rectifier Plastic SOD-123 Package

This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system

文件:197.63 Kbytes 页数:6 Pages

ONSEMI

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MBR230LSFT1

SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 30 VOLTS

文件:80.14 Kbytes 页数:5 Pages

ONSEMI

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MBR230LSFT1G

Surface Mount Schottky Power Rectifier

文件:68.63 Kbytes 页数:5 Pages

ONSEMI

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MBR230LSFT1G

Compact Intelligent Power Module (IPM) Motor Control Development Kit (MDK) 1 kW

文件:2.79432 Mbytes 页数:28 Pages

ONSEMI

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MBR230LSFT1G

SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 30 VOLTS

文件:80.14 Kbytes 页数:5 Pages

ONSEMI

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MBR230LSF

ZENER DIODES

AiT-Semi

创瑞科技

MBR230LSFT1G

肖特基功率整流器,表面贴装,30 V,2.0 A

The Schottky Rectifier employs the Schottky barrier principle with a large area metal-to-silicon power diode. It is ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications, where compact size and weight are critica • Guardring for Stress Protection\n• Low Forward Voltage Drop\n• 125 C Operating Junction Temperature\n• Epoxy Meets UL94, V-0\n• Package Designed for Optimal Automated Board Assembly\n• Cathode Lead Indicated by polarity Band\n• ESD Ratings, Machine Model = C, Human Body Model = 3B\n• Device Meets ;

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MBR230LSFT1H

DIODE SCHOTTKY

ONSEMI

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技术参数

  • IF (A):

    2

  • VF/ Max (V):

    0.55

  • VF/ IF (A):

    2

  • IR/ Max(µA):

    500

  • IR/ VR (V):

    30

  • 封装:

    SOD-123FL

供应商型号品牌批号封装库存备注价格
Bychip/百域芯
21+
SOD-123FL
30000
实单必成 质强价优 可开13点增值税
询价
SK
23+
3kreel
50000
全新原装正品现货,支持订货
询价
24+
N/A
78000
一级代理-主营优势-实惠价格-不悔选择
询价
SHIKUES/時科
25+
原封装
66000
郑重承诺只做原装进口现货
询价
KF科范微半导体
22+
SOD-123FL
20000
公司只做原装 品质保障
询价
KEFAN
20+
SOD-123FL
10
全新 发货1-2天
询价
ONS
24+
3000
询价
DISCRETE
3000
ON7
276000
询价
ON
24+/25+
2977
原装正品现货库存价优
询价
ON
SOT123
3000
原装长期供货!
询价
更多MBR230LSF供应商 更新时间2026-3-18 17:01:00