Switch-mode Power Rectifier

Switch-mode Power Rectifier Features and Benefits • Low Forward Voltage • Low Power Loss / High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 20 A Total (10 A Per Diode Leg) • These Devices are Pb−Free and are RoHS Compliant Applications • Power Supply − Output

文件：83.79 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 45 VOLTS

SWITCHMODE™ Power Rectifier Features and Benefits • Low Forward Voltage • Low Power Loss / High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 20 A Total (10 A Per Diode Leg) • Pb−Free Package is Available* Applications • Power Supply − Output Rectification • P

文件：504.67 Kbytes 页数：8 Pages

KERSEMI

SWITCHMODE Power Rectifier

SWITCHMODE™ Power Rectifier Features and Benefits • Low Forward Voltage • Low Power Loss / High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 20 A Total (10 A Per Diode Leg) • Pb−Free Package is Available* Applications • Power Supply − Output Rectification • P

文件：468.98 Kbytes 页数：6 Pages

KERSEMI

Guardring for overvoltage protection

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

文件：1.9575 Mbytes 页数：4 Pages

KERSEMI

Dual Common-Cathode Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

文件：512.98 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual Common-Cathode Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

文件：512.98 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

Guardring for overvoltage protection

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

文件：1.9575 Mbytes 页数：4 Pages

KERSEMI

MBR2045CTP SCHOTTKY RECTIFIER

Features 150C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability Terminals finish:

文件：201.27 Kbytes 页数：4 Pages

SMCDIODE

桑德斯微电子

20A SCHOTTKY BARRIER RECTIFIER

Features • Low Forward Voltage Drop • Soft, Fast Switching Capability • Schottky Barrier Chip • ITO-220S Heat Sink Tab Electrically Isolated from Cathode • UL Approval in Accordance with UL 1557, Reference No. E94661 Mechanical Data • Case: ITO-220S • Case Material: Molded Plastic, UL Flam

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DIODES

美台半导体

SWITCHMODEE TM Power Rectifier

SCHOTTKY BARRIER RECTIFIER 20 AMPERES 45 VOLTS . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Epoxy Meets UL9

文件：42.07 Kbytes 页数：4 Pages

ONSEMI

安森美半导体