Schottky Barrier Rectifier

Features ● Plastic package has underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction， positive center tap ● Metal of silicon rectifier， majority carrier conduction ● Low forward voltage， high efficiency ● Guarding for over voltage protection ● For use in

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SURGE

20.0 AMPS. Schottky Barrier Rectifiers

Features ☆ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ☆ Metal silicon junction, majority carrier conduction ☆ Low power loss, high efficiency ☆ High current capability, low forward voltage drop ☆ High surge capability ☆ For use in low voltage, high frequency

文件：356.3 Kbytes 页数：2 Pages

TSC

台湾半导体

20.0 AMPS. Schottky Barrier Rectifiers

FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition

文件：102.23 Kbytes 页数：2 Pages

TSC

台湾半导体

SCHOTTKY BARRIER TYPE DIODE

SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES • Average Output Rectified Current : IO=20A. • Repetitive Peak Reverse Voltage : VRRM=100V. • Fast Reverse Recovery Time : trr=35ns.

文件：442.22 Kbytes 页数：2 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

20A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

Features • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications • L

文件：64.959 Kbytes 页数：2 Pages

DIODES

美台半导体

Dual High Voltage Schottky Rectifier

Features • Low Forward Voltage Drop • Low Power Loss and High Efficiency • High Surge Capability • Rohs Compliant • Matte Tin(Sn) Lead Finish • Terminal Leads Surface is Corrosion Resistant and can withstand to 260°C

文件：232.32 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

SWITCHMODE??Power Rectifiers

This series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • 20 Amps Total (10 Amps Per Diode Leg) • Guard−Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Epoxy

文件：132.98 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

SWITCHMODE??Power Rectifiers

This series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • 20 Amps Total (10 Amps Per Diode Leg) • Guard−Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Epoxy

文件：132.98 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Dual High-Voltage Schottky Rectifiers

Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage,

文件：113.41 Kbytes 页数：3 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Common-Cathode High-Voltage Schottky Rectifier

Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage,

文件：160.85 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司