Trench MOS Schottky technology

Features · Low Power Loss · High Efficiency · Low Forward Voltage , High Current Capability · High surge capacity · Case : ITO-220AB Full Molded Plastic Package

文件：1.67834 Mbytes 页数：4 Pages

KERSEMI

20 Amp Schottky Barrier Rectifier 20 to 100 Volts

Features • Meatl of Silicon Rectifier, Majority Conducton • Guard ring for transient protection • Low Forward Voltage Drop • High Current Capability, High Efficiency • Low Power Loss

文件：438.84 Kbytes 页数：2 Pages

KERSEMI

20 Amp Schottky Barrier Rectifier 20 to 100 Volts

Features • Meatl of Silicon Rectifier, Majority Conducton • Guard ring for transient protection • Low Forward Voltage Drop • High Current Capability, High Efficiency • Low Power Loss

文件：438.84 Kbytes 页数：2 Pages

KERSEMI

Dual SchottkyBarrierRectifiers ReverseVoltage 100V Volts ForwardCurrent 20.0Amperes

egatloVesreveR 100V Volts serepmA0.02tnerruCdrawroF Features ◆ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ◆ Dual rectifier construction, positive center tap ◆ Metal silicon junction, majority carrier conduction ◆ Low power loss, high efficiency ◆ Guardr

文件：299.48 Kbytes 页数：3 Pages

FS

SCHOTTKY BARRIER RECTIFIER

REVERSE VOLTAGE: 35 to 200 VOLTS FORWARD CURRENT: 20.0 AMPERE FEATURES • Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 • Metal silicon junction, majority carrier conduction • Guard ring for overvoltage protection • Low power loss, high efficiency • For u

文件：261.75 Kbytes 页数：3 Pages

HORNBY

南通康比电子

Dual Common Cathode High-Voltage Schottky Rectifier,

DESCRIPTION The MBR20100CT Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150°C junction temperature. FEATURES ● 150°C TJ operation ● High frequency operation ● Low forward voltage drop

文件：403.83 Kbytes 页数：6 Pages

NELLSEMI

尼尔半导体

SWITCHMODE POWER RECTIFIERS

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • 20 Amps Total (10 Amps Per Diode Leg) • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temper

文件：790.4 Kbytes 页数：3 Pages

KERSEMI

20A Schottky Barrier Rectifiers

FEATURES • Metal of silicon rectifier,majority carrier conducton • Guard ring for transient protection • Low power loss, high efficiency • High current capability, low VF • High surge capacity • Plastic package has UL flammability classification 94V-0 MECHANICAL DATA • Case :TO-220 mol

文件：770.69 Kbytes 页数：2 Pages

MORESEMI

摩矽半导体

MBR20100CT SCHOTTKY RECTIFIER

Features 150C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Fr

文件：434.95 Kbytes 页数：4 Pages

SMCDIODE

桑德斯微电子

SCHOTTKY RECTIFIER

Features: • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability •

文件：117.3 Kbytes 页数：7 Pages

SMC

桑德斯微电子