SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE: 30 - 100 V CURRENT: 10 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard

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DSK

Metal of siliconrectifier, majonty carrier conducton

This series of SWITCHMODE power rectifiers uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Epoxy Meets UL 9

文件：509.74 Kbytes 页数：2 Pages

KERSEMI

Metal of siliconrectifier, majonty carrier conducton

This series of SWITCHMODE power rectifiers uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Epoxy Meets UL 9

文件：498.6 Kbytes 页数：2 Pages

KERSEMI

Metal of siliconrectifier, majonty carrier conducton

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

文件：509.76 Kbytes 页数：2 Pages

KERSEMI

SCHOTTKY RECTIFIER

Features 150℃ TJ operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are

文件：357.05 Kbytes 页数：6 Pages

SMCDIODE

桑德斯微电子

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications The plastic material carries U/L recogniti

文件：1.1711 Mbytes 页数：2 Pages

SAMYANG

三阳电子

SWITCHMODE™ Power Rectifiers

Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 10 A Total • Pb−Free Packages are Available* Applications • Power Supply – Output Rectification • Power Management • Instrumentation Mechanical Cha

文件：180.29 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Schottky Rectifiers

Features • Low Power Loss, High Efficiency • High Surge Capacity • Metal Silicon Junction, Majority Carrier Conduction • High Current Capacity, Low Forward-Voltage Drop • Guard Ring for Over-Voltage Protection (OVP) Applications • Low-Voltage • High-Frequency Inverters • Free Wheeling

文件：462.08 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

10A SCHOTTKY BARRIER RECTIFIER

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protect

文件：64.989 Kbytes 页数：2 Pages

DIODES

美台半导体

10.0 AMPS. Schottky Barrier Rectifiers

Voltage Range 30 to 200 Volts Current 10.0 Amperes Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High sur

文件：99.53 Kbytes 页数：2 Pages

TSC

台湾半导体