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型号	下载订购	功能描述	制造商上传企业	LOGO
MB85RS512T	文件：2.5689 Mbytes Page：36 Pages	512K (64 K X 8) Bit SPI DESCRIPTION MB85RS512T is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS512T adopts the Serial Peripheral Interface (SPI). 文件：2.5689 Mbytes 页数：36 Pages	RAMXEED 富士通	RAMXEED
MB85RS512TPNF-G-AME2	文件：2.5689 Mbytes Page：36 Pages	512K (64 K X 8) Bit SPI DESCRIPTION MB85RS512T is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS512T adopts the Serial Peripheral Interface (SPI). 文件：2.5689 Mbytes 页数：36 Pages	RAMXEED 富士通	RAMXEED
MB85RS512TPNF-G-AMERE2	文件：2.5689 Mbytes Page：36 Pages	512K (64 K X 8) Bit SPI DESCRIPTION MB85RS512T is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS512T adopts the Serial Peripheral Interface (SPI). 文件：2.5689 Mbytes 页数：36 Pages	RAMXEED 富士通	RAMXEED
MB85RS512TPNF-G-AWE2	文件：2.5689 Mbytes Page：36 Pages	512K (64 K X 8) Bit SPI DESCRIPTION MB85RS512T is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS512T adopts the Serial Peripheral Interface (SPI). 文件：2.5689 Mbytes 页数：36 Pages	RAMXEED 富士通	RAMXEED
MB85RS512TPNF-G-AWERE2	文件：2.5689 Mbytes Page：36 Pages	512K (64 K X 8) Bit SPI DESCRIPTION MB85RS512T is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS512T adopts the Serial Peripheral Interface (SPI). 文件：2.5689 Mbytes 页数：36 Pages	RAMXEED 富士通	RAMXEED
MB85RS512TPNF-G-JNE1	文件：2.5689 Mbytes Page：36 Pages	512K (64 K X 8) Bit SPI DESCRIPTION MB85RS512T is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS512T adopts the Serial Peripheral Interface (SPI). 文件：2.5689 Mbytes 页数：36 Pages	RAMXEED 富士通	RAMXEED
MB85RS512TPNF-G-JNERE1	文件：2.5689 Mbytes Page：36 Pages	512K (64 K X 8) Bit SPI DESCRIPTION MB85RS512T is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS512T adopts the Serial Peripheral Interface (SPI). 文件：2.5689 Mbytes 页数：36 Pages	RAMXEED 富士通	RAMXEED
MB85RS512TY	文件：2.70735 Mbytes Page：43 Pages	512K (64K X 8) Bit SPI DESCRIPTION MB85RS512TY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperatu 文件：2.70735 Mbytes 页数：43 Pages	RAMXEED 富士通	RAMXEED
MB85RS512TYPNF-GS-BCE1	文件：2.70735 Mbytes Page：43 Pages	512K (64K X 8) Bit SPI DESCRIPTION MB85RS512TY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperatu 文件：2.70735 Mbytes 页数：43 Pages	RAMXEED 富士通	RAMXEED
MB85RS512TYPNF-GS-BCERE1	文件：2.70735 Mbytes Page：43 Pages	512K (64K X 8) Bit SPI DESCRIPTION MB85RS512TY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperatu 文件：2.70735 Mbytes 页数：43 Pages	RAMXEED 富士通	RAMXEED

技术参数

输入电压：
1.8 to 3.6V
工作频率 (MAX)：
30MHz(*1)
工作温度：
-40 to +85℃
读写耐久性 (读写次数)：
10万亿次
封装类别：
SOP-8
供货状态：
量产中
仿真模型_Verilog：
可用
仿真模型_IBIS：
可用

供应商	型号	品牌	批号	封装	库存	备注	价格
北京逸博微科技有限公司	MB85RS512T	富士通	20+		500	全新现货热卖中欢迎查询	询价
深圳市欧亚佳电子有限公司	MB85RS512TPNF-G-JNERE1	FUJITSU	20+	SOP8	11520	特价全新原装公司现货	询价
深圳市喜鹊微科技有限公司	MB85RS512TPNF-G-JNERE1	FUJITSU富士通	20+	SOP8	13500	XAUI切换器,只做全新原装	询价
深圳市拓亿芯电子有限公司	MB85RS512TPNF-G-JNERE1	FUJITSU/富士通	25+	SOP-8	15000	全新原装现货,假一赔十	询价
瀚佳科技(深圳)有限公司	MB85RS512TPNF-G-JNERE1	FUJITSU/富士通	24+		65210		询价
深圳市艾宇欣科技有限公司	MB85RS512TPNF-G-JNERE1	Fujitsu	1930+	N/A	14365	加我qq或微信，了解更多详细信息,体验一站式购物	询价
艾睿（深圳）半导体有限公司	MB85RS512TPNF-G-JNERE1	FUJITSU(富士通)	2447	SOIC-8_150mil	315000	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市凯睿晟科技有限公司	MB85RS512TPNF-G-JNERE1	FUJITSU/富士通	21+	SOP	20000	百域芯优势实单必成可开13点增值税	询价
深圳市科雨电子有限公司	MB85RS512TPNF-G-JNERE1	FUJITSU	25+	SOP-8	932	就找我吧!--邀您体验愉快问购元件!	询价
深圳市冠亿通科技有限公司	MB85RS512TPNF-G-JNERE1	FUJITSU/富士通	25+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价

更多MB85RS512T供应商更新时间2025-12-22 10:02:00

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