MB85RS512TPNF-G-AMERE2中文资料富士通数据手册PDF规格书

DESCRIPTION

MB85RS512T is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536

words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

nonvolatile memory cells.

MB85RS512T adopts the Serial Peripheral Interface (SPI).

The MB85RS512T is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85RS512T can be used for 1013 read/write operations, which is a significant

improvement over the number of read and write operations supported by Flash memory and E2PROM.

MB85RS512T does not take long time to write data like Flash memories or E2PROM, and MB85RS512T

takes no wait time.

FEATURES

• Bit configuration : 65,536 words  8 bits

• Serial Peripheral Interface : SPI (Serial Peripheral Interface)

Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)

• Operating frequency : 1.8 V to 2.7 V, 25 MHz (Max)

2.7 V to 3.6 V, 30 MHz (Max)

For FSTRD command 2.7 V to 3.6 V, 40 MHz (Max)

• High endurance : 1013 times / byte

• Data retention : 10 years (+85 C), 95 years (  55 C), over 200 years (  35 C)

• Operating power supply voltage : 1.8 V to 3.6 V

• Low power consumption : Operating power supply current 6 mA (Typ@30 MHz)

10 mA (Max@30 MHz)

Standby current 120 A (Max)

Sleep current 10 A (Max)

• Operation ambient temperature range : -40 C to +85 C

• Package : 8-pin plastic SOP

RoHS compliant