MB85RS2MTAPNF-G-BDERE1集成电路（IC）的存储器规格书PDF中文资料

厂商型号	MB85RS2MTAPNF-G-BDERE1
参数属性	MB85RS2MTAPNF-G-BDERE1 封装/外壳为8-SOIC（0.154"，3.90mm 宽）；包装为卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带；类别为集成电路（IC）的存储器；产品描述：IC FRAM 2MBIT SPI 40MHZ 8SOP
功能描述	2 M (256 K X 8) Bit SPI
封装外壳	8-SOIC（0.154"，3.90mm 宽）
文件大小	2.46668 Mbytes
页面数量	40 页
生产厂商	RAMXEED
中文名称	富士通
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-10-31 8:40:00
人工找货	MB85RS2MTAPNF-G-BDERE1价格和库存，欢迎联系客服免费人工找货

DESCRIPTION

MB85RS2MTA is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 262,144

words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

nonvolatile memory cells.

MB85RS2MTA adopts the Serial Peripheral Interface (SPI).

The MB85RS2MTA is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85RS2MTA can be used for 1013 read/write operations, which is a significant

improvement over the number of read and write operations supported by Flash memory and E2PROM.

MB85RS2MTA does not take long time to write data like Flash memories or E2PROM, and MB85RS2MTA

takes no wait time.

FEATURES

Bit configuration : 262,144 words  8 bits

Serial Peripheral Interface : SPI (Serial Peripheral Interface)

Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)

Operating frequency : 40MHz (Max)

High endurance : 1014 times

Data retention : 10 years (+85 C), 95 years(+55 C)

Operating power supply voltage : 1.7 V to 3.6 V

Low power consumption : Operating power supply current 2.3mA (Max@40 MHz)

Standby current 50 A (Max)

Sleep current 10 A (Max)

Operation ambient temperature range : -40 C to +85 C

Package : 8-pin plastic SOP

RoHS compliant