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型号	下载订购	功能描述	制造商上传企业	LOGO
MB85RS256LYAPN-GS-AWE1	文件：2.66001 Mbytes Page：41 Pages	256K (32K X 8) Bit SPI DESCRIPTION MB85RS256LYA is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperat 文件：2.66001 Mbytes 页数：41 Pages	RAMXEED 富士通	RAMXEED
MB85RS256LYAPN-GS-AWEWE1	文件：2.66001 Mbytes Page：41 Pages	256K (32K X 8) Bit SPI DESCRIPTION MB85RS256LYA is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperat 文件：2.66001 Mbytes 页数：41 Pages	RAMXEED 富士通	RAMXEED
MB85RS256TY	文件：2.42728 Mbytes Page：39 Pages	256K (32 K X 8) Bit SPI DESCRIPTION MB85RS256TY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperatu 文件：2.42728 Mbytes 页数：39 Pages	RAMXEED 富士通	RAMXEED
MB85RS256TYA	文件：2.70662 Mbytes Page：43 Pages	256K (32K X 8) Bit SPI DESCRIPTION MB85RS256TYA is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperat 文件：2.70662 Mbytes 页数：43 Pages	RAMXEED 富士通	RAMXEED
MB85RS256TYAPNF-GS-BCE1	文件：2.70662 Mbytes Page：43 Pages	256K (32K X 8) Bit SPI DESCRIPTION MB85RS256TYA is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperat 文件：2.70662 Mbytes 页数：43 Pages	RAMXEED 富士通	RAMXEED
MB85RS256TYAPNF-GSBCERE1	文件：2.70662 Mbytes Page：43 Pages	256K (32K X 8) Bit SPI DESCRIPTION MB85RS256TYA is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperat 文件：2.70662 Mbytes 页数：43 Pages	RAMXEED 富士通	RAMXEED
MB85RS256TYAPN-GS-AWE1	文件：2.70662 Mbytes Page：43 Pages	256K (32K X 8) Bit SPI DESCRIPTION MB85RS256TYA is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperat 文件：2.70662 Mbytes 页数：43 Pages	RAMXEED 富士通	RAMXEED
MB85RS256TYAPN-GS-AWEWE1	文件：2.70662 Mbytes Page：43 Pages	256K (32K X 8) Bit SPI DESCRIPTION MB85RS256TYA is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperat 文件：2.70662 Mbytes 页数：43 Pages	RAMXEED 富士通	RAMXEED
MB85RS256TYPNF-GS-AWE2	文件：2.42728 Mbytes Page：39 Pages	256K (32 K X 8) Bit SPI DESCRIPTION MB85RS256TY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperatu 文件：2.42728 Mbytes 页数：39 Pages	RAMXEED 富士通	RAMXEED
MB85RS256TYPNF-GS-AWERE2	文件：2.42728 Mbytes Page：39 Pages	256K (32 K X 8) Bit SPI DESCRIPTION MB85RS256TY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperatu 文件：2.42728 Mbytes 页数：39 Pages	RAMXEED 富士通	RAMXEED

技术参数

输入电压：
2.7 to 3.6V
工作频率 (MAX)：
33MHz
工作温度：
-40 to +85℃
读写耐久性 (读写次数)：
1万亿次
封装类别：
SOP-8
供货状态：
量产中
仿真模型_Verilog：
可用
仿真模型_IBIS：
可用

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市毅创腾电子科技有限公司	MB85RS256	FUJITSU	23+	SOP8	8600	绝对全新原装!优势供货渠道!特价!请放心订购!	询价
深圳市信科微科技有限公司	MB85RS256	FUJITSU		sop-8	63200		询价
贸泽芯城（深圳）电子科技有限公司	MB85RS256	FUJITSU/富士通	23+	SOP-8	13000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市晨豪科技有限公司	MB85RS256	FUJITSU/富士通	23+	32K-Bit	89630	当天发货全新原装现货	询价
深圳市华来深电子有限公司	MB85RS256	FUJITSU	23+	SOP8	8560	受权代理!全新原装现货特价热卖!	询价
万三科技(深圳)有限公司	MB85RS256	Fujitsu(富士通)	25+	封装	500000	源自原厂成本,高价回收工厂呆滞	询价
深圳市卓越微芯电子有限公司	MB85RS256BPNF-G-JNERE1	FUJITSU	25+	SOP8	840	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市鹏和科技有限公司	MB85RS256A	FUJITSU-专卖	24+	SOP-8	5000	全现原装公司现货	询价
深圳市海天鸿电子科技有限公司	MB85RS256APNF-G-JNERE1	FUJITSU	1728+	SOP	7500	只做原装进口,假一罚十	询价
上海鑫科润电子科技有限公司	MB85RS256APNF-G-JNERE1	FUJITSU	1137+	SOP-8	21051	原装现货海量库存欢迎咨询	询价

更多MB85RS256供应商更新时间2025-12-15 10:50:00

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