MB85RS256TYAPN-GS-AWEWE1中文资料富士通数据手册PDF规格书

DESCRIPTION

MB85RS256TYA is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768

words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming

the nonvolatile memory cells. This product is specifically targeted for high-temperature environment such

as automobile applications.

MB85RS256TYA adopts the Serial Peripheral Interface (SPI).

The MB85RS256TYA is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85RS256TYA can be used for 1013 read/write operations, which is a

significant improvement over the number of read and write operations supported by Flash memory and

E2PROM.

As MB85RS256TYA does not need any waiting time in writing process, the write cycle time of

MB85RS256TYA is much shorter than that of Flash memories or E2PROM.

FEATURES

• Bit configuration : 32,768 words  8 bits

• Special Sector Region : 256 words  8 bits

In this region, data storage after (by) three times reflow based on

JEDEC MSL-3 standard condition is guaranteed.

• Unique ID

• Serial Number : 64 bits

In this region, data storage after (by) three times reflow based on

JEDEC MSL-3 standard condition is guaranteed.

• Serial Peripheral Interface : SPI (Serial Peripheral Interfaces)

Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)

• Operating frequency : 50 MHz (Max)

• High endurance : 1013 times / byte

• Data retention : 70.4 years (+85 C)

19.1 years (+105 C)

5.9 years (+125 C) or more

Under evaluation for more than 5.9 years(+125 C)

• Operating power supply voltage : 1.8 V to 3.6 V

• Low power consumption : Operating power supply current 3.7mA (Max@50 MHz)

Standby current 150A (Max)

Deep Power Down current 30A (Max)

Hibernate current 10A (Max)

• Operation ambient temperature range :  40 C to +125 C

• Package 8-pin plastic SOP (150mil)

8-pin plastic DFN (5mm x 6mm)

RoHS compliant