8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM

■ FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time • Operating Temperature –20 to +85°C — FLASH MEMORY • Minimum 100,000 write/erase cycles • Sector erase architecture One 16 K byte, two 8 K bytes, one 32 K byte, and fifteen 64 K bytes.

文件：393.02 Kbytes 页数：29 Pages

Fujitsu

富士通

8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM

■ FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time • Operating Temperature –20 to +85°C — FLASH MEMORY • Minimum 100,000 write/erase cycles • Sector erase architecture One 16 K byte, two 8 K bytes, one 32 K byte, and fifteen 64 K bytes.

文件：393.02 Kbytes 页数：29 Pages

Fujitsu

富士通

FUJITSU/富士通
TSOP-28

FUJITSU/富士通

上传：京海半导体(深圳)有限公司

FUJITSU/富士通
SOP28

FUJITSU/富士通

上传：深圳市俊晖半导体有限公司

FUJITSU
SOP8

Fujitsu

富士通

上传：深圳市得捷芯城科技有限公司