QPF4800SR

Wi-FiFrontEndModule

SDM4800

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ●SurfaceMountPackage. ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable.

SDM4800

N-Channel20V(D-S)MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET •OptimizedforHigh-SideSynchronous RectifierOperation •100RgTested •100UISTested APPLICATIONS •NotebookCPUCore -High-SideSwitch

SI4800

N-channelenhancementmodefield-effecttransistor

N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOStechnology. 1.Lowgatecharge 2.Surfacemountedpackage 3.Lowon-stateresistance 4.Fastswitching.

SI4800BDY

N-ChannelReducedQg,FastSwitchingMOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21   Available •TrenchFET®PowerMOSFET •High-EfficientPWMOptimized •100UISandRgTested

Si4800BDY

N-ChannelReducedQg,FastSwitchingMOSFET

SI4800BDY

N-ChannelReducedQg,FastSwitchingMOSFET

SI4800BDY

N-ChannelReducedQg,FastSwitchingMOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Available •TrenchFET®PowerMOSFET •High-EfficientPWMOptimized •100UISandRgTested

SI4800DY

N-ChannelReducdedQg,FastSwitchingMOSFET

SIZF4800LDT

DualN-Channel80V(D-S)MOSFET

FEATURES •TrenchFET®GenIVpowerMOSFET •Symmetricdualn-channel •Flipchiptechnologyoptimalthermaldesign •HighsideandlowsideMOSFETsformoptimized combinationfor50dutycycle •OptimizedRDS-QgandRDS-QgdFOMelevatesefficiency forhighfrequencyswitching •100R