SIZF4800LDT中文资料威世科技数据手册PDF规格书

FEATURES

• TrenchFET® Gen IV power MOSFET

• Symmetric dual n-channel

• Flip chip technology optimal thermal design

• High side and low side MOSFETs form optimized

combination for 50 duty cycle

• Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency

for high frequency switching

• 100 Rg and UIS tested

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

Synchronous buck

Half bridge

POL

Telecom DC/DC