N-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Surface Mount Package. ● Super high dense cell design for low RDS(ON). ● Rugged and reliable.

文件：649.23 Kbytes 页数：7 Pages

SAMHOP

三合微科

N-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

文件：1.00654 Mbytes 页数：9 Pages

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30V; 9A; N-channel enchanced mode field effect transistor

Samhop

三合微科

N-channel enhancement mode field-effect transistor

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1. Low gate charge 2. Surface mounted package 3. Low on-state resistance 4. Fast switching.

文件：254.88 Kbytes 页数：13 Pages

PHI

PHI

N-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Surface Mount Package. ● Super high dense cell design for low RDS (ON). ● Rugged and reliable.

文件：696.76 Kbytes 页数：7 Pages

SAMHOP

三合微科

Vertical deflection circuit for monitor applications

文件：90.95 Kbytes 页数：16 Pages

PHI

PHI