SI4435DDY

P-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitches •BatterySwitch

SI4435DDY

P-ChannelMOSFETusesadvancedtrenchtechnology

SI4435DY

30VP-ChannelPowerTrenchMOSFET

GeneralDescription ThisP-ChannelMOSFETisaruggedgateversionofFairchildSemiconductor’sadvancedPowerTrenchprocess.Ithasbeenoptimizedforpowermanagementapplicationsrequiringawiderangeofgavedrivevoltageratings(4.5V–25V). Features •–8.8A,–30VRDS(ON)=20mΩ@VGS

SI4435DY

P-ChannelMOSFET

■Features ●VDS=-30V ●RDS(on)=0.02Ω@VGS=-10V ●RDS(on)=0.035Ω@VGS=-4.5V

SI4435DY

PowerMOSFET(Vdss=-30V,Rds(on)=0.020ohm

VDSS=-30V RDS(on)=0.020Ω Description TheseP-channelHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforusei

SI4435DY-HF

P-ChannelMOSFET

■Features ●VDS=-30V ●RDS(on)=0.02Ω@VGS=-10V ●RDS(on)=0.035Ω@VGS=-4.5V ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesa Pb−FreeLeadFinish

SI4435DYPBF

SimpleDriveRequirements

SI4435DYPBF

HEXFETPowerMOSFET

VDSS=-30V RDS(on)=0.020Ω Description TheseP-channelHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforusei

SI4435DYTRPBF

UltraLowOn-Resistance

VDSS=-30V RDS(on)=0.020Ω Description TheseP-channelHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforusei

SI4435FDY

P-Channel30V(D-S)MOSFET