MJD253

iscSiliconPNPPowerTransistor

DESCRIPTION •HighDCCurrentGain- :hFE=40(Min)@IC=-0.2A •LowCollectorSaturationVoltage- :VCE(sat)=-0.3V(Max.)@IC=-0.5A •ComplementtotheNPNMJD243 •MinimumLot-to-Lotvariationsforrobustdeviceperformance andreliableoperation APPLICATIONS •Designedfo

MJD253

SiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=-100V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=-0.3V(Max)@IC=-0.5A APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications

MJD253

SiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=-100V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=-0.3V(Max)@IC=-0.5A APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications

MJE253

COMPLEMENTARYSILICONPOWERTRANSISTORS

DESCRIPTION Thecentralsemiconductormje240,mje250seriestypesarecomplementarysiliconpowertransistorsdesignedforaudioamplifierandswitchingapplications.

MJE253

4AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON100VOLTS15WATTS

ComplementarySiliconPowerPlasticTransistors ...designedforlowpoweraudioamplifierandlow–current,high–speedswitchingapplications. •HighCollector–EmitterSustainingVoltage— VCEO(sus)=100Vdc(Min)—MJE243,MJE253 •HighDCCurrentGain@IC=200mAdc

MJE253

POWERTRANSISTORSCOMPLEMENTARYSILICON

Thesedevicesaredesignedforlowpoweraudioamplifierandlow−current,high−speedswitchingapplications. Features •HighCollector−EmitterSustainingVoltage− VCEO(sus)=100Vdc(Min) •HighDCCurrentGain@IC=200mAdc hFE=40−200

MJE253

ComplementarySiliconPowerPlasticTransistors100VOLTS,15WATTS

MJE253

iscSiliconPNPPowerTransistor

DESCRIPTION •Collector–EmitterSustainingVoltage-:VCEO(SUS)=-100V(Min) •DCCurrentGain-:hFE=40(Min)@IC=-0.2A •LowCollectorSaturationVoltage-:VCE(sat)=-0.3V(Max.)@IC=-0.5A •ComplementtoTypeMJE243 APPLICATIONS •Designedforlowpoweraudioamplifierandlow-cur

MJE253

ComplementarySiliconPowerPlasticTransistors

MJE253

COMPLEMENTARYSILICONPOWERTRANSITORS