丝印：MAS；Package：DO-214AC；400W Transient Voltage Suppressor (TVS) protection device

Description and applications This device has the ability to clamp dangerous high voltage, short term transients such as produced by directed or radiated electrostatic discharge phenomena before entering sensitive component regions of a circuit design. Response time of clamping action is virtual

文件：489.87 Kbytes 页数：6 Pages

Microsemi

美高森美

丝印：MASTERGAN1；Package：QFN9x9x1mm；High power density 600V Half bridge driver with two enhancement mode GaN HEMT

Features • 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors: – QFN 9 x 9 x 1 mm package – RDS(ON) = 150 mΩ – IDS(MAX) = 10 A • Reverse current capability • Zero reverse recovery loss • UVLO protection on low-side and high-side • Internal b

文件：529.53 Kbytes 页数：27 Pages

STMICROELECTRONICS

意法半导体

丝印：MASTERGAN1；Package：QFN9x9x1mm；High power density 600V Half bridge driver with two enhancement mode GaN HEMT

Features • 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors: – QFN 9 x 9 x 1 mm package – RDS(ON) = 150 mΩ – IDS(MAX) = 10 A • Reverse current capability • Zero reverse recovery loss • UVLO protection on low-side and high-side • Internal b

文件：529.53 Kbytes 页数：27 Pages

STMICROELECTRONICS

意法半导体

丝印：MASTERGAN2；Package：QFN；High power density 600V Half bridge driver with two enhancement mode GaN HEMT

Features • 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors in asymmetrical configuration: – QFN 9 x 9 x 1 mm package – RDS(ON) = 150 mΩ (LS) + 225 mΩ (HS) – IDS(MAX) = 10 A (LS) + 6.5 A (HS) • Reverse current capability • Zero reverse recov

文件：680.33 Kbytes 页数：29 Pages

STMICROELECTRONICS

意法半导体

丝印：MASTERGAN2；Package：QFN；High power density 600V Half bridge driver with two enhancement mode GaN HEMT

Features • 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors in asymmetrical configuration: – QFN 9 x 9 x 1 mm package – RDS(ON) = 150 mΩ (LS) + 225 mΩ (HS) – IDS(MAX) = 10 A (LS) + 6.5 A (HS) • Reverse current capability • Zero reverse recov

文件：680.33 Kbytes 页数：29 Pages

STMICROELECTRONICS

意法半导体

AM Receiver IC

DESCRIPTION The MAS1016 AM-Receiver chip is a highly sensitive, simple to use AM receiver specially intended to receive time signals in the frequency range from 40 kHz to 100 kHz. There are only a few external components needed. The circuit has a preamplifier, wide range automatic gain control, d

文件：109.14 Kbytes 页数：6 Pages

MAS

AM Receiver IC

DESCRIPTION The MAS1016 AM-Receiver chip is a highly sensitive, simple to use AM receiver specially intended to receive time signals in the frequency range from 40 kHz to 100 kHz. There are only a few external components needed. The circuit has a preamplifier, wide range automatic gain control, d

文件：109.14 Kbytes 页数：6 Pages

MAS

AM Receiver IC

DESCRIPTION The MAS1016 AM-Receiver chip is a highly sensitive, simple to use AM receiver specially intended to receive time signals in the frequency range from 40 kHz to 100 kHz. There are only a few external components needed. The circuit has a preamplifier, wide range automatic gain control, d

文件：109.14 Kbytes 页数：6 Pages

MAS

AM Receiver IC

DESCRIPTION The MAS1016B AM Receiver chip is a highly sensitive, simple to use AM receiver specially intended to receive time signals in the frequency range from 40 kHz to 100 kHz. Only a few external components are required for time signal receiver. The circuit has preamplifier, wide range autom

文件：203.67 Kbytes 页数：10 Pages

MAS

AM Receiver IC

DESCRIPTION The MAS1016B AM Receiver chip is a highly sensitive, simple to use AM receiver specially intended to receive time signals in the frequency range from 40 kHz to 100 kHz. Only a few external components are required for time signal receiver. The circuit has preamplifier, wide range autom

文件：203.67 Kbytes 页数：10 Pages

MAS