丝印：MASTERGAN1；Package：QFN9x9x1mm；High power density 600V Half bridge driver with two enhancement mode GaN HEMT

Features • 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors: – QFN 9 x 9 x 1 mm package – RDS(ON) = 150 mΩ – IDS(MAX) = 10 A • Reverse current capability • Zero reverse recovery loss • UVLO protection on low-side and high-side • Internal b

文件：529.53 Kbytes 页数：27 Pages

STMICROELECTRONICS

意法半导体

丝印：MASTERGAN1；Package：QFN9x9x1mm；High power density 600V Half bridge driver with two enhancement mode GaN HEMT

Features • 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors: – QFN 9 x 9 x 1 mm package – RDS(ON) = 150 mΩ – IDS(MAX) = 10 A • Reverse current capability • Zero reverse recovery loss • UVLO protection on low-side and high-side • Internal b

文件：529.53 Kbytes 页数：27 Pages

STMICROELECTRONICS

意法半导体

丝印：MASTERGAN1；Package：QFN9x9x1mm；High power density 600V Half bridge driver with two enhancement mode GaN HEMT

Features • 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors: – QFN 9 x 9 x 1 mm package – RDS(ON) = 150 mΩ – IDS(MAX) = 10 A • Reverse current capability • Zero reverse recovery loss • UVLO protection on low-side and high-side • Internal b

文件：529.53 Kbytes 页数：27 Pages

STMICROELECTRONICS

意法半导体

丝印：MASTERGAN1；Package：QFN9x9x1mm；High power density 600V Half bridge driver with two enhancement mode GaN HEMT

Features • 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors: – QFN 9 x 9 x 1 mm package – RDS(ON) = 150 mΩ – IDS(MAX) = 10 A • Reverse current capability • Zero reverse recovery loss • UVLO protection on low-side and high-side • Internal b

文件：529.53 Kbytes 页数：27 Pages

STMICROELECTRONICS

意法半导体