MA4SW210B-1

Monolithic Pin Diode Switches with Integrated Bias Network

Description TheMA4SW210B-1andMA4SW310B-1devicesareSP2TandSP3TbroadbandswitcheswithintegratedbiasnetworksutilizingM/A-COMsHMICTM(HeterolithicMicrowaveIntegratedCircuit)Process,USPatent5,268,310.Thisprocessallowstheincorporationofsiliconpedestalsthatformseriesa

MA4SW210B-1

HMIC??Silicon PIN Diode Switches with Integrated Bias Network

Description TheMA4SW210B-1(SP2T)andMA4SW310B-1(SP3T)broadbandswitcheswithanintegratedbiasnetworksutilizingMACOM’sHMICTM(HeterolithicMicrowaveIntegratedCircuit)process,USPatent5,268,310.Thisprocessallowstheincorporationofsiliconpedestalsthatformseriesandshuntdi

MA4SW210B-1

Broad Bandwidth Specified 2 - 18 GHz

Description TheMA4SW210B-1(SP2T)andMA4SW310B-1(SP3T)broadbandswitcheswithanintegratedbiasnetworksutilizingMACOM’sHMICTM(HeterolithicMicrowaveIntegratedCircuit)process,USPatent5,268,310.Thisprocessallowstheincorporationofsiliconpedestalsthatformseriesandshuntdi

MA4SW210B-1

HMIC PIN Diode with Bias; ·Broad Bandwidth Specified 2 to 18 GHz\n·RoHS Compliant\n·Polymer Protective Coating\n·Glass Encapsulate\n·Fully Monolithic Construction\n·Low Insertion Loss / High Isolation\n·Integrated Bias Network\n·Usable up to 26 GHz\n;

The MA4SW210B-1 and MA4SW310B-1 devices are SP2T and SP3T broadband switches with an integrated bias networks utilizing MACOM's HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between circuit elements, this combination of silicon and glass gives HMIC™ devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while full area, gold, backside metallization allows for manual or automatic chip bonding via 80Au/20Sn solders or electrically conductive silver epoxy.

MA4SW210B-1

HMIC Silicon PIN Diode Switches with Integrated Bias Network

MA4SW210B-1

Package：模具；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：RF/IF，射频/中频和 RFID 射频开关 描述：IC RF SWITCH SPDT 18GHZ DIE

MACOM Technology Solutions

MA4SW210B-1_15

HMIC Silicon PIN Diode Switches with Integrated Bias Network