MA4SW210B-1RF/IF射频/中频RFID的射频开关规格书PDF中文资料

描述 Description

The MA4SW210B-1 (SP2T) and MA4SW310B-1 (SP3T) broadband switches with an integrated bias networks utilizing MACOM’s HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between circuit elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies.

The top side of the chip is protected by a polymer coating for manual or automatic handling and large gold bond pads help facilitate connection of low inductance ribbons. The gold metallization on the backside of the chip allows for attachment via 80/20 (gold/tin) solder or conductive silver epoxy.

特性 Features

• Broad Bandwidth Specified 2 - 18 GHz

• Usable up to 26 GHz

• Integrated Bias Network

• Lower Insertion Loss / Higher Isolation

• Fully Monolithic, Glass Encapsulated Chip

• Up to +33 dBm CW Power Handling @ +25°C

• RoHS* Compliant