MA4SW110RF/IF射频/中频RFID的射频开关规格书PDF中文资料

描述 Description

The MA4SW110, 210 and 310 series are broad band monolithic switches using series and shunt connected silicon PIN diodes. They are designed for use as small signal, high performance switches in applications up to 26.5 Ghz. They provide performance levels superior to those realized by hybrid MIC designs incorporating beam lead and PIN chip diodes that require chip and wire assembly.

These switches are fabricated using M/A-COM’s patented HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance through low millimeter frequencies.

特性 Features

• Broad Bandwidth

• Specified up to 20 GHz

• Usable to 26.5 GHz

• Low Insertion Loss / High Isolation

• Rugged, Fully Monolithic, Glass Encapsulated

Construction