MA4SW210B-1数据手册RF/IF射频/中频RFID的射频开关规格书PDF

描述 Description

The MA4SW210B-1 and MA4SW310B-1 devices are SP2T and SP3T broadband switches with an integrated bias networks utilizing MACOM's HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between circuit elements, this combination of silicon and glass gives HMIC™ devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while full area, gold, backside metallization allows for manual or automatic chip bonding via 80Au/20Sn solders or electrically conductive silver epoxy.

特性 Features

·Broad Bandwidth Specified 2 to 18 GHz
·RoHS Compliant
·Polymer Protective Coating
·Glass Encapsulate
·Fully Monolithic Construction
·Low Insertion Loss / High Isolation
·Integrated Bias Network
·Usable up to 26 GHz

应用 Application

·Aerospace and Defense
·ISM