MA4SPS422数据手册MACOM中文资料规格书

描述 Description

This device is a Silicon-Glass PIN diode chip fabricated with MACOM's patented HMIC™ process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. The diode is formed on the top of one pedestal and connections to the backside of the device are facilitated by making the pedestal sidewalls electrically conductive. Selective backside metallization is applied producing a surface mount device. This vertical topology provides for exceptional heat transfer. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and the anode air-bridge during handling and assembly. These surmount devices are suitable for usage in moderate incident power (10W C.W.) or higher incident peak power (500W) series, shunt, or series-shunt switches. Lower parasitic inductance, 0.1 to 0.2nH, and excellent RC constant (0.45pS), make the devices ideal for higher frequency switch elements compared to their plastic device counterparts.

特性 Features

·Surface Mount
·RoHS* Compliant
·Higher Average and Peak Power Handling
·Low Parasitic Capacitance and Inductance
·Polymer Scratch Protection
·Silicon Nitride Passivation
·Rugged Silicon-Glass Construction
·No Wire Bonding Required
·260º Reflow Compatible

应用 Application

·Aerospace and Defense
·ISM