MA4SW210

HMIC??Silicon PIN Diode Switches RoHS Compliant

Description TheMA4SW110(SPST),MA4SW210(SPDT)andMA4SW310(SP3T)areseries-shunt,broadband,PINdiodeswitchesmadewithMACOM’sHMICTM(HeterolithicMicrowaveIntegratedCircuit)process.Thisprocessallowsthesiliconpedestalswhichformtheseries-shuntdiodesandviastobeembedded

MA4SW210

Monolithic PIN Diode Switches

Description TheMA4SW110,210and310seriesarebroadbandmonolithicswitchesusingseriesandshuntconnectedsiliconPINdiodes.Theyaredesignedforuseassmallsignal,highperformanceswitchesinapplicationsupto26.5Ghz.Theyprovideperformancelevelssuperiortothoserealizedbyh

MA4SW210

HMIC™ PIN Diode; ·Broad Bandwidth\n·50 nS Switching Speed\n·Up to +30dBm C.W. Power Handling @ +25°C\n·Glass Encapsulated Chip with Polymer Protective Coating\n·Rugged Design Fully Monolithic\n·Lower Insertion Loss and Higher Isolation than Comparable pHEMT/Discrete Component Designs\n·Usable from 50 MHz to 26.5 GHz\n·Specified from 50 MHz to 20 GHz\n;

The MA4SW110, MA4SW210 and MA4SW310 are series-shunt, broadband, PIN diode switches made with MACOM’s HMIC™ (Heterolithic Microwave Integrated Circuit) process. This process allows the silicon pedestals which form the series - shunt diodes and vias to be embedded into low loss, low dispersion glass. By also incorporating small spacing between circuit elements, the result is an HMIC™ chip with low insertion loss and high isolation at frequencies up to 26.5GHz. They are designed for use as moderate power, high performance switches and provide superior performance when compared to similar designs that use discrete components. The top side of the chip is protected by a polymer coating for manual or automatic handling and large gold bond pads help facilitate connection of low inductance ribbons. The gold metallization on the backside of the chip allows for attachment via 80/20, gold/tin solder or conductive silver epoxy.

MA4SW210

Broadband Monolithic Silicon PIN Diode Switches

MA4SW210

HMIC Silicon PIN Diode Switches

MA4SW210

Package：模具；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：RF/IF，射频/中频和 RFID 射频开关 描述：IC RF SWITCH SPDT 20GHZ DIE

ETC

MA4SW210B-1

HMIC PIN Diode with Bias; ·Broad Bandwidth Specified 2 to 18 GHz\n·RoHS Compliant\n·Polymer Protective Coating\n·Glass Encapsulate\n·Fully Monolithic Construction\n·Low Insertion Loss / High Isolation\n·Integrated Bias Network\n·Usable up to 26 GHz\n;

The MA4SW210B-1 and MA4SW310B-1 devices are SP2T and SP3T broadband switches with an integrated bias networks utilizing MACOM's HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between circuit elements, this combination of silicon and glass gives HMIC™ devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while full area, gold, backside metallization allows for manual or automatic chip bonding via 80Au/20Sn solders or electrically conductive silver epoxy.

MA4SW210B-1

Monolithic Pin Diode Switches with Integrated Bias Network

Description TheMA4SW210B-1andMA4SW310B-1devicesareSP2TandSP3TbroadbandswitcheswithintegratedbiasnetworksutilizingM/A-COMsHMICTM(HeterolithicMicrowaveIntegratedCircuit)Process,USPatent5,268,310.Thisprocessallowstheincorporationofsiliconpedestalsthatformseriesa

MA4SW210B-1

HMIC??Silicon PIN Diode Switches with Integrated Bias Network

Description TheMA4SW210B-1(SP2T)andMA4SW310B-1(SP3T)broadbandswitcheswithanintegratedbiasnetworksutilizingMACOM’sHMICTM(HeterolithicMicrowaveIntegratedCircuit)process,USPatent5,268,310.Thisprocessallowstheincorporationofsiliconpedestalsthatformseriesandshuntdi

MA4SW210B-1

Broad Bandwidth Specified 2 - 18 GHz

Description TheMA4SW210B-1(SP2T)andMA4SW310B-1(SP3T)broadbandswitcheswithanintegratedbiasnetworksutilizingMACOM’sHMICTM(HeterolithicMicrowaveIntegratedCircuit)process,USPatent5,268,310.Thisprocessallowstheincorporationofsiliconpedestalsthatformseriesandshuntdi