| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
M6056HJSN | 2.5 x 3.2 mm, 3.0 V, Clipped Sine Wave, TCXO/VCTCXO | MTRONPTI Mtron Industries, Inc. | MTRONPTI | |
SINGLEPOLE,THREETHROWCONNECTORIZEDSWITCHES | MICRONETICSMicronetics, Inc. Micronetics, Inc. | MICRONETICS | ||
TESTJACKS | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
Teck901000V,3GC#68StrBC,XLPEInsM4,PVCJkt,SIAArmor,BlkPVCJkt,CSAHLSUNRES-40C ProductDescription Teck901000V,3+GConductor6+8AWG(7x14H)BareCopper,XLPEInsulationM4ColorCode,PVCInnerJacket,SteelInterlockArmor,BlackPVCOuter Jacket,CSAHLSUNRES-40C | BELDENBelden Inc. 百通电缆设计科技有限公司 | BELDEN | ||
Component16X1PAIR | ALPHAWIREAlpha Wire 阿尔法电线 | ALPHAWIRE | ||
PowermanagementLSIformobilephone | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
12SP207/28TCPEPVCComputerCable | GENERALGeneral Electric 通用电气公司美国通用电气公司 | GENERAL | ||
Automatedprobemanufacturingenableslowcostandshortleadtime | IRONWOODIronwood Electronics. Lronwood电子公司 | IRONWOOD | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=9.0mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,76A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,76A,RDS(ON)=6.2mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,78A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=9.0mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,15A,RDS(ON)=7.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,15A,RDS(ON)=7.5mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,14.5A,RDS(ON)=7.8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=10mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=9.0mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Connor |
22+ |
NA |
75 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
23+ |
N/A |
58800 |
一级代理放心采购 |
询价 | |||
HARWIN PLC |
1527 |
8 |
公司优势库存 热卖中! |
询价 | |||
HARWIN |
18+ |
连接器 |
1384 |
进口原装正品优势供应QQ3171516190 |
询价 | ||
HARWIN |
2021+ |
标准接口 |
285000 |
专供连接器,军工合格供应商! |
询价 | ||
Harwin |
2020+ |
N/A |
155 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
HARWIN |
20+ |
连接器 |
963 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
HARWIN |
2308+ |
388412 |
一级代理,原装正品,公司现货! |
询价 | |||
HARWIN |
2022+ |
原厂原包装 |
6800 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
I-PEX |
23+ |
连接器 |
10500 |
专业做连接器接插件原装进口公司现货 |
询价 |
相关规格书
更多- M-606
- M6060C
- M6060C
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- M6060P-E3/45
- M6062
- M60641GSN
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- M60U1M250-F
- M60U1M50-F
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- M60U33M25-F
- M60U3R3M100-F
- M60U3R3M25-F
- M60U47M25-F
- M60U4R7M100-F
- M60U4R7M25-F
- M60U68M25-F
- M60U6R8M100-F
- M60U6R8M25-F
- M60UR10M100-F
- M60UR10M50-F
- M60UR15M250-F
相关库存
更多- M6060
- M6060C
- M6060P
- M6060P
- M6061
- M6063
- M60641HSN
- M60642GSN
- M60642JSN
- M6064HHSN
- M60651GSN
- M60651JSN
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- M6065HJSN
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- M60U1R5M100-F
- M60U1R5M25-F
- M60U22M100-F
- M60U22M50-F
- M60U2R2M250-F
- M60U33M100-F
- M60U33M50-F
- M60U3R3M250-F
- M60U3R3M50-F
- M60U47M50-F
- M60U4R7M250-F
- M60U4R7M50-F
- M60U68M50-F
- M60U6R8M250-F
- M60U6R8M50-F
- M60UR10M250-F
- M60UR15M100-F
- M60UR22M100-F
