M6065HHSN

2.0 x 2.5 mm, 3.0 V, Clipped Sine Wave, TCXO/VCTCXO

M6065HJSN

2.0x2.5mm,3.0V,ClippedSineWave,TCXO/VCTCXO

MAX6065AEUR-T

Precision,Micropower,Low-Dropout,High-Output-Current,SOT23VoltageReferences

GeneralDescription TheMAX6061–MAX6068areprecision,low-dropout,micropowervoltagereferences.Thesethree-terminaldevicesareavailablewithoutputvoltageoptionsof1.25V,1.8V,2.048V,2.5V,3V,4.096V,4.5V,and5V.Theyfeatureaproprietarycurvature-correctioncircuitandlaser-tri

MAX6065BEUR-T

Precision,Micropower,Low-Dropout,High-Output-Current,SOT23VoltageReferences

GeneralDescription TheMAX6061–MAX6068areprecision,low-dropout,micropowervoltagereferences.Thesethree-terminaldevicesareavailablewithoutputvoltageoptionsof1.25V,1.8V,2.048V,2.5V,3V,4.096V,4.5V,and5V.Theyfeatureaproprietarycurvature-correctioncircuitandlaser-tri

MAXIM6065

PLASTICENCAPSULATEDDEVICES

DeviceDescription General TheMAX6100isalow-cost,low-dropout(LDO),micropowervoltagereferences.Thisthree-terminalreferencehasanoutputvoltageoptionof1.8V.Itfeaturesaproprietarycurvature-correctioncircuitandlaser-trimmed,thin-filmresistorsthatresultinalowtemperatu

MDR-6065

ACandDCcoils,latchingandnon-latching

MN6065A

1500WATTSPEAKPOWERDISSIPATION

NCE6065AG

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6065AGusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=65A RDS(ON)

NCE6065G

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6065Gusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=65A RDS(ON)

RJP6065

SiliconNChannelIGBTHighSpeedPowerSwitching

*Lowcollectortoemittersaturationvoltage VCE(sat)=1.8Vtyp.(IC=40A,VGE=15V,Ta=25°C)  *Gatetoemittervoltagerating30V *Pb-freeleadplatingandchipbonding