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BH6056GU

Power management LSI for mobile phone

ROHMRohm Semiconductor

罗姆罗姆半导体集团

BH6056GU-E2

包装:卷带(TR) 封装/外壳:36-VFBGA 类别:集成电路(IC) 电源管理 - 专用 描述:IC POWER MGMT LSI 36VCSPH

ROHMRohm Semiconductor

罗姆罗姆半导体集团

6056

SINGLEPOLE,THREETHROWCONNECTORIZEDSWITCHES

MICRONETICSMicronetics, Inc.

Micronetics, Inc.

6056

TESTJACKS

etc2List of Unclassifed Manufacturers

etc2未分类制造商

6056

Teck901000V,3GC#68StrBC,XLPEInsM4,PVCJkt,SIAArmor,BlkPVCJkt,CSAHLSUNRES-40C

ProductDescription Teck901000V,3+GConductor6+8AWG(7x14H)BareCopper,XLPEInsulationM4ColorCode,PVCInnerJacket,SteelInterlockArmor,BlackPVCOuter Jacket,CSAHLSUNRES-40C

BELDEN

Belden Inc.

6056C

Component16X1PAIR

ALPHAWIREAlpha Wire

阿尔法电线

C6056A

12SP207/28TCPEPVCComputerCable

GENERALGeneral Electric

通用电气公司美国通用电气公司

CBT-BGA-6056

Automatedprobemanufacturingenableslowcostandshortleadtime

IRONWOODIronwood Electronics.

Lronwood电子公司

CEB6056

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEB6056

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB6056L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=9.0mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED6056

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,76A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED6056

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,76A,RDS(ON)=6.2mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CED6056L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,78A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=9.0mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM6056

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,15A,RDS(ON)=7.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM6056

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,15A,RDS(ON)=7.5mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEM6056L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,14.5A,RDS(ON)=7.8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=10mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP6056

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP6056

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEP6056L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=9.0mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

详细参数

  • 型号:

    BH6056GU

  • 制造商:

    ROHM

  • 制造商全称:

    Rohm

  • 功能描述:

    Power management LSI for mobile phone

供应商型号品牌批号封装库存备注价格
ROHM现货
2022+
36-VFBGA
350000
专注工业、军工级别芯片,十五年优质供应商
询价
23+
N/A
38460
正品授权货源可靠
询价
只做原装
21+
BGA
36520
一级代理/放心采购
询价
ROHM
20+
36-BGA
2500
就找我吧!--邀您体验愉快问购元件!
询价
Rohm Semiconductor
21+
36-VFBGA
15000
正规渠道/品质保证/原装正品现货
询价
Rohm Semiconductor
22+
36BGA (3.5x3.5)
9000
原厂渠道,现货配单
询价
Rohm Semiconductor
21+
36BGA (3.5x3.5)
13880
公司只售原装,支持实单
询价
Rohm Semiconductor
2022+
36-BGA(3.5x3.5)
7300
原装现货
询价
Rohm Semiconductor
23+
36-BGA3.5x3.5
7300
专注配单,只做原装进口现货
询价
ROHM-罗姆
24+25+/26+27+
36-BGA
6328
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
更多BH6056GU供应商 更新时间2024-4-30 14:00:00