CEP6056L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=9.0mW@VGS=4.5V.

CEU6056

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,76A,RDS(ON)=6.2mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CEU6056

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,76A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CEU6056

N-ChannelMOSFETusesadvancedSGTtechnology

CEU6056L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,78A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=9.0mW@VGS=4.5V.

DVRN6056

VOLTAGEREFERENCEARRAY

DVRN6056

VOLTAGEREFERENCEARRAY

FKBA6056

SingleN-ChannelMOSFET

Features AdvancedTrenchMOSTechnology LowGateCharge LowRDS(ON) 100EASGuaranteed GreenDeviceAvailable Applications MotorControl. DC/DCConverter. Synchronousrectifierapplications.

FKBB6056

N-Ch60VFastSwitchingMOSFETs

Description AdvancedTrenchMOSTechnology LowGateCharge LowRDS(ON) 100EASGuaranteed GreenDeviceAvailable Application MotorControl. DC/DCConverter. Synchronousrectifierapplications.

FKD6056

N-Ch60VFastSwitchingMOSFETs

Description ⚫AdvancedTrenchMOSTechnology ⚫LowGateCharge ⚫LowRDS(ON) ⚫100EASGuaranteed ⚫GreenDeviceAvailable Application ⚫MotorControl. ⚫DC/DCConverter. ⚫Synchronousrectifierapplications.