N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 100A, RDS(ON) = 6.2mW @VGS = 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 9.0mW @VGS = 4.5V.

文件：653.29 Kbytes 页数：4 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 76A , RDS(ON) = 6.2mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：356.33 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 76A , RDS(ON) = 6.2mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

文件：468.3 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 78A, RDS(ON) = 6.2mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 9.0mW @VGS = 4.5V.

文件：647.37 Kbytes 页数：4 Pages

CET-MOS

华瑞