N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 78A, RDS(ON) = 6.2mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 9.0mW @VGS = 4.5V.

文件：647.37 Kbytes 页数：4 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 15A, RDS(ON) = 7.5 mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：423.86 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 15A, RDS(ON) = 7.5 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead-free plating ; RoHS compliant.

文件：497.16 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 14.5A, RDS(ON) = 7.8 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 10 mW @VGS = 4.5V.

文件：653.83 Kbytes 页数：4 Pages

CET-MOS

华瑞