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M5M51008BFP

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

M5M51008CFP

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

M5M51008CKV

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

M5M51008CP

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

M5M51008CRV

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

M5M51008CVP

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

M5M51008DFP

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

M5M51008DFP

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

M5M51008DKR

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

M5M51008DKV

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

供应商型号品牌批号封装库存备注价格
MIT
24+/25+
68
原装正品现货库存价优
询价
MITSUBISHI
05+
原厂原装
4224
只做全新原装真实现货供应
询价
MIT
2016+
TSOP32
6528
只做进口原装现货!或订货,假一赔十!
询价
MITSUBISHI
24+
TSSOP-32
4650
询价
MIT
TSOP32
4400
全新原装进口自己库存优势
询价
24+
SOP32
7003
询价
MIT
24+
TSSOP
5000
只做原装公司现货
询价
MIT
2020+
TSSOP
4500
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
MIT
17+
TSOP32
9988
只做原装进口,自己库存
询价
MIT
20+
TSSOP
2960
诚信交易大量库存现货
询价
更多M5M51008ARV供应商 更新时间2025-7-28 15:24:00