64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt

文件：1.10087 Mbytes 页数：82 Pages

STMICROELECTRONICS

意法半导体

64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory

ST

意法半导体

64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M58WR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti

文件：497.11 Kbytes 页数：81 Pages

STMICROELECTRONICS

意法半导体

64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M58WR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti

文件：497.11 Kbytes 页数：81 Pages

STMICROELECTRONICS

意法半导体

64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M58WR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti

文件：497.11 Kbytes 页数：81 Pages

STMICROELECTRONICS

意法半导体

64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M58WR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti

文件：497.11 Kbytes 页数：81 Pages

STMICROELECTRONICS

意法半导体

64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt

文件：1.10087 Mbytes 页数：82 Pages

STMICROELECTRONICS

意法半导体

64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt

文件：1.10087 Mbytes 页数：82 Pages

STMICROELECTRONICS

意法半导体

64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt

文件：1.10087 Mbytes 页数：82 Pages

STMICROELECTRONICS

意法半导体

64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt

文件：1.10087 Mbytes 页数：82 Pages

STMICROELECTRONICS

意法半导体