首页 >M58WR064EB>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

M58WR064EB

64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory

SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58WR064EB10ZB6T

64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory

SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58WR064EB70ZB6T

64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory

SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58WR064EB80ZB6T

64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory

SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58WR064EBZB

64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory

SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58WR064EB70ZB6

包装:托盘 封装/外壳:56-VFBGA 类别:集成电路(IC) 存储器 描述:IC FLASH 64MBIT PARALLEL 56VFBGA

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

M58WR064EB70ZB6T

包装:托盘 封装/外壳:56-VFBGA 类别:集成电路(IC) 存储器 描述:IC FLASH 64MBIT PARALLEL 56VFBGA

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58WR064

64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58WR064B

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064isa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58WR064EBZB

64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58WR064ET

64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58WR064ETZB

64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58WR064E-ZBT

64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58WR064FT

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58WR064FTB

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58WR064F-ZB

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58WR064F-ZBE

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58WR064F-ZBF

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58WR064F-ZBT

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58WR064HB

64Mbit(4Mbx16,MultipleBank,Burst)1.8VsupplyFlashmemories

NUMONYXNUMONYX

恒忆

详细参数

  • 型号:

    M58WR064EB

  • 制造商:

    STMICROELECTRONICS

  • 制造商全称:

    STMicroelectronics

  • 功能描述:

    64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory

供应商型号品牌批号封装库存备注价格
STMicroelectronics
2022
ICFLASH64MBIT70NS56VFBGA
5058
原厂原装正品,价格超越代理
询价
ST
2016+
BGA
6528
只做原厂原装现货!终端客户个别型号可以免费送样品!
询价
ST
23+
BGA
5000
原装正品,假一罚十
询价
ST
22+
BGA-M56P
2560
绝对原装!现货热卖!
询价
ST
2339+
BGA
5632
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
STMicroelectronics
18+
ICFLASH64MBIT70NS56VFBGA
6800
公司原装现货
询价
MicronTechnologyInc.
19+
56-VFBGA(7.7x9)
56800
只卖原装正品!价格超越代理!可开增值税发票!
询价
ST
18+
BGA
12500
全新原装正品,本司专业配单,大单小单都配
询价
STMicroelectronics
21+
60-TFBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
询价
STMicroelectronics
21+
56-VFBGA(7.7x9)
56200
一级代理/放心采购
询价
更多M58WR064EB供应商 更新时间2024-5-30 9:18:00