PIN CONTACT

Transportationġ

文件：133.34 Kbytes 页数：1 Pages

JAE

航空电子

256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package

Description The M36P0R8070E0 combines two memories in a multichip package: ● 256-Mbit multiple bank Flash memory (the M58PR256J) ● 128-Mbit PSRAM (the M69KB128AA). This datasheet should be read in conjunction with the M58PR256J and M69KB128AA datasheets, which are available from your local Num

文件：638.18 Kbytes 页数：22 Pages

NUMONYX

256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package

Description The M36P0R8070E0 combines two memories in a multichip package: ● 256-Mbit multiple bank Flash memory (the M58PR256J) ● 128-Mbit PSRAM (the M69KB128AA). This datasheet should be read in conjunction with the M58PR256J and M69KB128AA datasheets, which are available from your local Num

文件：638.18 Kbytes 页数：22 Pages

NUMONYX

256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package

Description The M36P0R8070E0 combines two memories in a multichip package: ● 256-Mbit multiple bank Flash memory (the M58PR256J) ● 128-Mbit PSRAM (the M69KB128AA). This datasheet should be read in conjunction with the M58PR256J and M69KB128AA datasheets, which are available from your local Num

文件：638.18 Kbytes 页数：22 Pages

NUMONYX

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

Summary description The M36P0R9070E0 combines two memory devices in one Multi-Chip Package: ● 512-Mbit Multiple Bank Flash memory (the M58PR512J). ● 128 Mbit PSRAM (the M69KB128AB). The purpose of this document is to describe how the two memory components operate with respect to each other. It

文件：468.7 Kbytes 页数：23 Pages

NUMONYX

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

Summary description The M36P0R9070E0 combines two memory devices in one Multi-Chip Package: ● 512-Mbit Multiple Bank Flash memory (the M58PR512J). ● 128 Mbit PSRAM (the M69KB128AB). The purpose of this document is to describe how the two memory components operate with respect to each other. It

文件：468.7 Kbytes 页数：23 Pages

NUMONYX

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

Summary description The M36P0R9070E0 combines two memory devices in one Multi-Chip Package: ● 512-Mbit Multiple Bank Flash memory (the M58PR512J). ● 128 Mbit PSRAM (the M69KB128AB). The purpose of this document is to describe how the two memory components operate with respect to each other. It

文件：468.7 Kbytes 页数：23 Pages

NUMONYX

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

Summary description The M36P0R9070E0 combines two memory devices in one Multi-Chip Package: ● 512-Mbit Multiple Bank Flash memory (the M58PR512J). ● 128 Mbit PSRAM (the M69KB128AB). The purpose of this document is to describe how the two memory components operate with respect to each other. It

文件：468.7 Kbytes 页数：23 Pages

NUMONYX

SOCKET CONTACT (GOLD PLATING)

Transportationġ

文件：139.63 Kbytes 页数：1 Pages

JAE

航空电子

32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package

SUMMARY DESCRIPTION The M36W0R5020T0 and M36W0R5020B0 combine two memory devices in a Multi-Chip Package: ■ a 32-Mbit, Multiple Bank Flash memory, the M58WR032FT/B ■ and a 4-Mbit SRAM. Recommended operating conditions do not allow more than one memory to be active at the same time. FEATURES S

文件：184.58 Kbytes 页数：26 Pages

STMICROELECTRONICS

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